2SD2204 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONSAPPLICATIONS Unit in mmHAMMER DRIVE, PULSE MOTOR DRIVE
2SD2206 ,Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..
2SD2211 , High breakdown voltage Low collector output capacitance High transition frequency
2SD2212 , Medium Power Transistor(Motor, Relay drive) (60±10V, 2A)
2SD2212 , Medium Power Transistor(Motor, Relay drive) (60±10V, 2A)
2SD2213 , Silicon NPN Epitaxial, Darlington
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
3266W-1-202 , 1/4 Square Trimming Potentiometer
3269W-1-502 , 3269 - 1/4 ” Square SMD Trimpot® Trimming Potentiometer
2SD2204
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
TOSHIBA ZSD2204
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SD2204
HIGH POWER SWITCHING APPLICATIONS Unit in mm
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 1010.3 f3.210.2 mm
=i q T
J C,', m -
o High DC Current Gain : hFE=2000 (Min.) t' tt o rn ts,
(VCE = 3V, IC = 1.5A) E '/2
0 Low Saturation Voltage .' VCE (sat)=1-5V (Max.) (10:1.5A) m 1.1 I I d
. , 1.1 .
MAXIMUM RATINGS (Tc=25°C) 0.75h0.15l ' , gi
CHARACTERISTIC SYMBOL RATING UNIT 2.590.25 2.54t.0.25
Collector-Base Voltage VCBO 65uf10 V g 1 2 3 g N
Collector-Emitter Voltage VCEO 65-K 10 V i''i-prr, "' rm f" $3
Emitter-Base Voltage VEBO 7 V 2 f'ri'"'1llii,i'.
DC 10 4 1. BASE
Collector Current A 2 LLE T R
Pulse ICP 6 3: EEMTTERO
Base Current IE 0.5 A
Collector Power Ta=25°C P 2.0 W JEDEC -
Dissipation Te = 25°C C 25 JEIT A SC-67
J unction Temperature Tj 150 "C TOSHIB A 2-10R1A
Storage Temperature Range Tstg -55--150 T Weight : 1.7 g (Typ.)
EQUIVALENT CIRCUIT
COLLECTOR
EMITTER
1 2001-11-05
TOSHIBA 2SD2204
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB =45V, IE =0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 6V, IC =0 - - 2.5 mA
Couector-Emitter
Breakdown Vol tage V (BR) CEO IC - 10mA, IB - 0 55 65 75 V
. hFE (1) VCE = 3V, IC = 1.5A 2000 - 15000
C Current Gain hFE (2) VCE 23V, IC 23A 1000 - -
Collector-Emi; VCE (sat) (1) IC = 1.5A, IB = 3mA - - 1.5 V
Saturation Voltage VCE (sat) (2) IC = 3A, IB = 12mA - - 2.0
Base-Emitter Saturation
V = = - -
Vol tage BE (sat) IC 1.5A, IB 3mA 2.0 V
. t -f1WPUT
Turn-on Time on 20ys I LII - 1.0 -
Switching I H IN = g
Time Storage Time tstg B1 HHUT B2 N - 5.0 - #5
. IBI = -IB2=3rnA, - 2.0 -
Fall Time tf DUTY CYCLES 1% L.ckiv
2 2001 -1 1 -0 5
TOSHIBA
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hpE
VCE (sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE
IC - VCE
COMMON
EMITTER
Tc = 25''C
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON
E MITTER
VCE = 3V
Te = 100°C
0.1 0.3 1 3 10
COLLECTOR CURRENT 1C (A)
VCE (sat) - IC
COMMON
EMITTER
IC/IB=250
0.3 0.5 1 3 5 10
COLLECTOR CURRENT IC (A)
10 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT
BASE-EMITTER SATURATION VOLTAGE
VBE(saL) (V)
2SD2204
IC - VBE
COMMON
EMITTER
VCE=3V
iTc=10(? 25 -55
0.8 1.6 2.4 3.2 4.0
BASE-EMITTER VOLTAGE VBE (V)
VCE - IB
COMMON
EMITTER
Tc=25°C
1 3 10 30 100 300
BASE CURRENT IB (mA)
VBE (sat) - IC
COMMON
EMITTER
10 [113 = 250
0.3 0.5 1 3 5 10
COLLECTOR CURRENT IC (A)
TOSHIBA
2SD2204
COLLECTOR POWER, DISSIPATION PC (W)
10 (A)
COLLECTOR CURRENT
(J) Ta=Te INFINITE HEAT SINK
Ce), NO HEAT SINK
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
SAFE OPERATING AREA
IO lllll IIII
IC MAX. (PULSE) X 100 Ms X
10ms y.4 \ N
3 IC MAX. s, \lms X
(CONTINUOUS) N.
DC OPERATION 's, \
1 Tc=25°C
0.5 \ \
0.3 X SINGLE NONREPETITIVE \
. PULSE Tc=25°C l
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN
VCEO MAX.
0.1 TEMPERATURE.
1 3 5 10 30 50
COLLECTOR-EMITTER VOLTAGE VCE (V)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
C) INFINITE HEAT SINK
O) NO HEAT SINK
m, (”CIW)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
TOSHIBA ZSD2204
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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