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2SD2131
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
TOSHIBA
2SD2131
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON)
25.21131]
HIGH POWER SWITCHING APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
dt High DC Current Gain
: hFE =2000 (Min.) (VCE =3V, Ic=3 A)
0 Low Saturation Voltage
: VCE (sat)=1-5V (Max.) (Ic=3A)
0 Zener Diode Included Between Collector and Base.
0 Unclamped Inductive Load Energy : E=150mJ (Min.)
MAXIMUM RATINGS (Tc = 25°C)
OJSiOJS
1 2 3 ev"
- - +|
254:025
l. BASE
2. COLLECTOR
3. EMITTER
JEDEC -
JEITA SC-67
TOSHIBA 2-10R1A
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 i 10 V
Collector-Emir Voltage VCEO 60 i 10 V
Emitter-Base Voltage VEBO 7 V
DC IC 5
Collector Current Pulse ICP 8 A
Base Current IB 0.5 A
Collector Power Ta = 25°C 2.0
Dissipation Te = 25°C PC 30 W
J unction Temperature Tj 150 T
Storage Temperature Range Tstg -55-150 T
EQUIVALENT CIRCUIT
Weight : 1.7g (Typ.)
TOSHIBA 2SD2131
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB =45V, IE =0 - - 10 PA
Collector Cut-off Current ICEO VCE =45V, IB =0 - - 10 PA
Emitter Cut-off Current IEBO VEB =6V, IC =0 - - 2.5 mA
Collector-Base Breakdown
Voltage V (BR) CBO 1C - 1mA, IE - 0 50 60 70 V
Collector-Emi; Breakdown - -
Voltage V (BR) CEO IC - 10mA, 1B - 0 50 60 70 V
. hFE (1) VCE = 3V, IC = 3A 2000 - 15000
DC Current Gain hFE (2) VCE = 3V, IC = 5 A 1000 - -
Collector-Emitter Saturation VCE (sat) (1) IC = 3A, IB = 6mA - 1.1 1.5 V
Voltage VCE (sat) (2) IC = 5A, IB = 20mA - 1.3 2.5
Base-Emitter Saturation
Vol tage VBE (sat) IC - 3A, IB - 6mA - 1.7 2.5 V
Unclamped Inductive Load ES / B (Note 1) 150 - - m J
Energy
OUTPUT
Turn-on Time ton I 1 r - T - 1.0 -
Switching .
Time Storage Time tstg - 4.0 - [18
Fall Time tf IB1 = - 1B2 = 6mA, VCC - 2.5 -
DUTY CYCLES 1% = 30V
(Note 1) Measurement circuit of unclamped inductive load energy.
(Note 2) Ci)
(2) E=1/2 L 1sz
r'-w-,
I132 = -0.1A
\\_____ IC
Pulse width adjusted for desired ICP (ICP=5.47A MIN.)
CLAMP (C-B ZENNER)
TOSHIBA
2SD2131
COMMON
A EMITTER
s Tc=25°C
0 2 4 6 8 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
VCE=3V
E 10000
E 5000
© 3000
U) 1000
COLLECTOR-EMITTER SATURATION
0.05 0.1 0.3 0.5 1 3 5 10 20
COLLECTOR CURRENT IC (A)
VCE (sat) - IC
COMMON EMITTER
A 5 IC/IB=250
'it" 3
0.5 25
0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT 1C (A)
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER VOLTAGE VCE
BASE—EMITTER SATURATION VOLTAGE
VBE (sat) (V)
Te--100oc//zl-55
/ / / COMMON EMITTER
/ VCE=3V
0.8 1.6 2.4 3.2 4.0
BASE-EMITTER VOLTAGE VBE (V)
VCE - IB
COMMON EMITTER
Tc=25°C
0.30.5 1 3 5 10 3050100 300
BASE CURRENT IB (mA)
VBE (sat) - IC
COMMON EMITTER
IC / 13 = 250
Te = - 55°C
0.3 0.5 1 3 5 10
COLLECTOR CURRENT IC (A)
TOSHIBA
2SD2131
Rth (t) - tw
co Ta=25°C NO HEAT SINK
TRANSIENT THERMAL RESISTANCE
Rth (1,) (°C/ W)
G-s 10-2 IO-I 100 101
PULSE WIDTH tw (s)
SAFE OPERATING AREA
10 Ic MAX. (PULSED) X
IC MAX. (CONTINUOUS)
5 10msX
DC OPERATION
s Tc=25°C
n: 0.5
X SINGLE NONREPETITIVE
0.03 PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
1 3 5 10 30
C0LLECT0R-EMITTER VOLTAGE VCE
C2) Tc=25°C INFINITE HEAT SINK
VCEO MAX
COLLECTOR POWER DISSIPATION PC
(D Tc=Ta
INFINITE HEAT SINK
C)) NO HEAT SINK
75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
TOSHIBA 2SD2131
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
:
www.loq.com
.
