2SD2092 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING, LAMP, SOLENOID DRIVE APPLICATIONS.APPLICATIONS Unit in mm_1010.3 ' (#32102 2,7ur0.20 High DC Current Gain : hFE (1)=500--15000 Low Co ..
2SD2092 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING, LAMP, SOLENOID DRIVE APPLICATIONS.2SD2092TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPEZSD2092LAMP, SOLENOID DRIVE
2SD2097 , Low VCE(sat) transistor (strobe flash)
2SD2097TV2R , Low VCE(sat) Transistor(Strobe flash)
2SD2098 T100R , Low VCE(sat) Transistor(Strobe flash)
2SD2100 ,NPN Epitaxial Planar Silicon Transistors Compact Motor Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
3214J-1-202E , 3214 - 5-Turn Trimpot® Trimming Potentiometer
3214J-1-203E , 3214 - 5-Turn Trimpot® Trimming Potentiometer
3214W-1-202E , 3214 - 5-Turn Trimpot® Trimming Potentiometer
3224W-1-104E , 3224 - 4 mm SMD Trimpot® Trimming Potentiometer
3224W-1-104E , 3224 - 4 mm SMD Trimpot® Trimming Potentiometer
3224W-1-201E , 3224 - 4 mm SMD Trimpot® Trimming Potentiometer
2SD2092
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING, LAMP, SOLENOID DRIVE APPLICATIONS.
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
2SID2092
LAMP, SOLENOID DRIVE APPLICATIONS
SWITCHING APPLICATIONS
0 High DC Current Gain : hFE (1)=500-1500
q Low Collector Saturation Voltage
l VCE (sat)=0.3V (Max.)
MAXIMUM RATINGS (Tc = 25°C)
2SD2092
Unit in mm
2.7t0.2
CHARACTERISTIC SYMBOL RATING UNIT 0.75 10.15 I
Collector-Base Voltage VCBO 100 V 2 +02 '
. i . . 4t .
Collector-Emi; Voltage VCEO 100 V 2 54 025 5 5
Emitter-Base Voltage VEBO 7 V Il',-'',. fig 1;
DC I 3 tr- - tl
Collector Current C A 2 - e
Pulse ICP 5
Base Current 1B 1 A 1. BASE
= o 2. COLLECTOR
fy1ytt.' Power Ta 25 C PC 2.0 W 3. EMITTER
Dissipation Te = 25°C 25
J unction Temperature Tj 150 "C JEDEC -
Storage Temperature Range Tstg -55--150 "C JEITA SC-67
TOSHIBA 2-10R1A
EQUIVALENT CIRCUIT Weight : 1.7g (Typ.)
COLLECTOR
EMITTER
TOSHIBA ZSD2092
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 100V, IE = 0 - - 10 PA
Emitter Cut-off Current IEBO VEB = 7V, 10 = 0 - - 10 PA
Collector-Emi; Breakdown
Voltage V (BR) CEO 10 - 50mA, IB - 0 100 - - V
. hFE (1) VCE = IV, IC = 0.5A 500 - 1500
DC Current Gain hFE (2) VCE = IV, IC = IA 150 - -
Collector-Emi; Saturation
Vol tage VCE (sat) IC - IA, IB - 10mA - - 0.3 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - IA, IB - 10mA - - 1.2 V
Collector-Emitter Forward
Voltage VECF IE - IA, IB - 0 - - 2.0 V
Transition Frequency fT VCE = 5V, IC = 0.5A - 140 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = lMHz - 3O - pF
. OUTPUT
Turn-on Time ton 20 8 IN- I - 0.5 -
(f) PUT El
Switching . 1B1 =
B2 CC) - -
Time Storage Time tstg 1B2 5 [us
. - - VCC
Fall Time tf IBI - -IB2 - 10mA, = 30V - 0.7 -
DUTY CYCLES 1%
2 2001-11-05
TOSHIBA ZSD2092
IC - VCE VCE - IC
COMMON EMITTER
Te = 25°C
COMMON EMITTER
Te = 25°C
COLLECTOR CURRENT 10 (A)
If; =0.2mA
COLLECTOR-EMITTER VOLTAGE VCE
0 2 4 6 8 10 12 14 16 18 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
C0LLECT0R-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE - IC VCE - IC
COMMON EMITTER
Tc = - 55°C
COMMON EMITTER
Te = 100°C
10 14 20 30 10 14 20
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR—EMITTER VOLTAGE VCE (V)
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
hFE - IC hFE - IC
3000 3000
COMMON EMITTER Tc= 100°C COMMON EMITTER
T =25°C V =1V
E c E CE
= 1000 = 1000 25
E F.?,
g 500 g 500
M 300 M 300
100 100
0.05 0.1 0.3 0.5 1 3 5 10 0.05 0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
3 2001-11-05
TOSHIBA
VCE (sat) - IC
COMMON EMITTER
Ic/IB=100
Tc = 100°C
COLLECTOR—EMITTER SATURATION VOLTAGE
VCE(sat) (V)
0.05 0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
2.5 VCE = IV
Tc=100°C 25 -55
COLLECTOR CURRENT 10 (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE-EMITTER VOLTAGE VBE (V)
rth - tw
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
T, INFINITE HEAT SINK
(l)) NO HEAT SINK
TRANSIENT THERMAL RESISTANCE
rm (°C/W)
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
BASE-EMI’I‘TER SATURATION VOLTAGE
VBE (sat) (V)
10 (A)
COLLECTOR CURRENT
2SD2092
VBE (sat) - IC
COMMON EMITTER
IC/IB=100
1 Tc = -55'C
0.05 0.1 0.3 0.5 1 3
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
10 I I I I I I I I
I l I I I III
I I I I I I I I
IC MAX. (PULSED) .7.f
l l \ \ I .
1001(st
IC MAX.
3 sy), \ \
(CONTINUOUS) M ""'i
10ms)k. l l
100msW. N, t
1 _ _ l
-nc OPERATION Tc=25°C A \
0.5 - l k
0.3 N \ \
0.1 1.
.)k. SINGLE NONREPETITIVE I
PULSE Tc=25°C
0.05 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
2 5 10 30 50 100 200
C0LLECT0WEMITTER VOLTAGE VCE (V)
TOSHIBA ZSD2092
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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