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2SD2091 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
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2SD2075
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ LAMP/ SOLENOID DRIVE APPLICATIONS)
TOSHIBA
2SD2075A
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS
LAMP, SOLENOID DRIVE APPLICATIONS
2SD2075A
INDUSTRIAL APPLICATIONS
Unit in mm
3.2t0.2 2.7102
o High DC Current Gain : hFE=500--1500 (IC=1A) ii'
0 Low Collector Saturation Voltage 2% m
: VCE (sat)=0.3v (Max.) (10 =5A) i',,.
MAXIMUM RATINGS (Ta = 25°C) 0.75 LFO.15 l
CHARACTERISTIC SYMBOL RATING UNIT 15410-25 254M125
Collector-Base Voltage VCBO 60i 10 V 'S'. _: PM.
3-4“ n im I CD
Collector-Emi; Voltage VCEO 60ue 10 V y; 1 2 3 1:
Emitter-Base Voltage VEBO 7 V Ct V
DC 1C 10 l. BASE
Collector Current Pulse ICP 15 A 2. COLLECTOR
3. EMITTER
Base Current IB 2 A
Collector Power Ta=25°C P 2.0 W JEDEC -
Dissipation Tc=25°C C 30 EIAJ -
Junction Temperature Tj 150 T TOSHIB A 2-10R1A
Storage Temperature Range Tstg -55--150 ''C
EQUIVALENT CIRCUIT
COLLECTOR
EMITTER
961001EAA1
operatin
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
TOSHIBA 2SD2075A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB =45V, IE = 0 - - 10 pLt
Emitter Cut-off Current IEBO VEB=7V, IC =0 - - 10 PA
Collector-Emi; Breakdown
Voltage V (BR) CEO IC - 50mA, IB - 0 50 60 70 V
. hFE (1) VCE = IV, IC = IA 500 - 1500
DC Current Gain hFE (2) VCE = IV, IC = 5A 150 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC - 5A, 1B - 0.05A - - 0.3 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 5A, IB - 0.05A - - 1.2 V
Col1eetor-Emitter Forward
Voltage VECF IC - 5A, IB - O - - 2.0 V
Transition Frequency fT VCE = 5V, IC = IA - 90 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = lMHz - 140 - pF
T Ti t OUTPUT O 5
urn-on 1me on IN- - . -
2%5 PUT IE}
. . - Cl
Switching . IBHI l IB2 e)
Time Storage Time tstg 1B2 - 2.0 - ps
. 131: -IB2=0.05A, VCC
Fall Time tf DUTY CYCLE s 1% = 30V - 0.6 -
1998-09-08 2/4
TOSHIBA 2SD2075A
IC - VCE A VCE - IC
COMMON EMITTER m COMMON EMITTER
g 20 Te=25''C y Tc=25°C
Es < 40 60 80
5.3 E:
=1mA j
0 4 8 12 16 20 0 4 8 12 16
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
A VCE - IC VCE - IC
COMMON EMITTER
Tc = 100°C
40 60F8011
COMMON EMITTER
Tc = - 55°C
40 sol- 80
COLLECTOR-EMITTER, VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE
0 l s 12 16 0 4 s 12 16
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
hFE - IC hFE - IC
5000 5000
COMMON EMITTER COMMON EMITTER
3000 Tc=25°c 3000 VCE=1V
' ' Tc=100°C
?5, 1000 E 1000
g g 25
ti 500 ti 500 -55
at 300 at 300
100 100
0.05 0.1 0.3 0.5 1 3 5 10 20 0.05 0.1 0.3 0.5 1 3 5 10 20
COLLECTOR CURRENT 10 (A) COLLECTOR CURRENT 10 (A)
1998-09-08 3/4
TOSHIBA
2SD2075A
VCE (sat) - IC
COMMON EMITTER
0.5 IC/IB= 100
Tc = 100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE vcmm) (V)
0.05 0.1 0.3 0.5 1 3 5 10 20
COLLECTOR CURRENT 10 (A)
IC - VBE
tl tl I
S? 12 "
M il I
B Tc=100°C/ 25/ -55
F, / / / COMMON EMITTER
M / VCE=1V
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
(1) NO HEAT SINK
(2) INFINITE HEAT SINK (Tc=25°C)
TRANSIENT THERMAL RESISTANCE
m, (°C/W)
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
BASE-EMITTER SATURATION VOLTAGE
10 (A)
COLLECTOR CURRENT
VBE (sat) (V)
VBE (sat) - IC
COMMON EMITTER
IC/IB=100
0.05 0.1 0.3 0.5 1 3 5 10 20
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
IC MAX. (PULSED) X
100ms 10rnskt.
10 MAX.
5 (CONTINUOUS)
DC OPERATION
(Tc = 25''C)
>:< SINGLE NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE. VCEO MAX.
3 5 10 30 50 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
1998-09-08 4/4
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