2SD2012 ,TO-220 Plastic-Encapsulate Biploar TransistorsAPPLICATIONS Unit in mm0 High DC Current Gain : hFE (1) = 100 (Min.)0 Low Saturation Voltage: VCE ( ..
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2SD2014. , Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose)
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3214J-1-202E , 3214 - 5-Turn Trimpot® Trimming Potentiometer
3214J-1-203E , 3214 - 5-Turn Trimpot® Trimming Potentiometer
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2SD2012-2SD2012..
TO-220 Plastic-Encapsulate Biploar Transistors
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SD2012
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
0 High DC Current Gain .' hFE (1) = 100 (Min.)
0 Low Saturation Voltage
: VCE (sat) = 1.0V (Max.)
0 High Power Dissipation : PC = 25W (Tc = 25°C)
MAXIMUM RATINGS (Tc = 25°C)
2SD2012
0.75:0.15
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V """", 2 3 2.54h0.25
Collector-Emi; Voltage VCEO 60 V r''',-',, _: g
Emitter-Base Voltage VEBO 7 V 1,'ii:--EE It.'
Collector Current 10 3 A o q
Base Current IB 0.5 A 1. BASE
Collector Power Ta = 25°C P 2.0 W i fiehhti'/"
Dissipation Te = 25°C C 25 .
J unction Temperature Tj 150 "C JEDEC -
Storage Temperature Range Tstg -55-150 "C JEITA -
TOSHIBA 2-10R1A
Weight : 1.7g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 60 V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 7V, 10 = 0 - - 100 PA
Collector-Emitter Breakdown
Voltage V(BR) CEO IC - 50 mA, IB - 0 60 - - V
. hFE (1) VCE = 5V, 1C = 0.5 A 100 - 320
DC Current Gain hFE (2) VCE = 5V, 1C = 2A 20 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC - 2 A, IB - 0.2 A - 0.4 1.0 V
Base-Emitter Voltage VBE VCE = 5 V, 1C = 0.5 A - 0.75 1.0 V
Transition Frequency fT VCE = 5 V, 1C = 0.5 A - 3 - MHz
Coll tor Out ut Ca a itan C VCB = 10 V, IE = o, 35 F
ec p p c ce ob f = 1 MHz - - p
TOSHIBA
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE chm) (V)
COLLECTOR POWER DISSIPATION PC
10 - VCE
IB = 10mA
COMMON EMITTER
Tc = 25°C
1 2 3 4 5 6 7
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB = 10
Tc = 100°C
0.030.05 0.1 0.3 0.5 1 3
COLLECTOR CURRENT 10 (A)
co Ta = Te INFINITE HEAT SINK
Ce? NO HEAT SINK
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
DC CURRENT GAIN hm
COLLECTOR CURRENT
10 (A)
COLLECTOR CURRENT
2SD2012
hFE - IC
COMMON EMITTER
VCE = 5 V
Tc = 100"C
0.01 0.03 0.05 0.1 0.3 0.5 l 3
COLLECTOR CURRENT Ic (A)
IC - VBE
COMMON EMITTER
VCE = 5 V
Te = 100°C 25 -25
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
EIC MAX. (PULSED) yd.
5'10 MAX. sh, l lms)K.
- (CONTINUOUS) Nh _.......---" 10 msy.f
l I llll \ NS.A e.......---'"
i DC OPERATION )y,
To = 25°C
0.5 iii SINGLE NONREPETITIVE
PULSE To = 25''C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
0.1 I III I
1 3 5 10 30 50 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA ZSD2012
rth - tw
T Ta = 25'C NO HEAT SINK
co Te = 25''C INFINITE HEAT SINK
TRANSIENT THERMAL RESISTANCE
rth (°C/W)
iie' 10-2 IO-r 1 10 102
PULSE WIDTH tw (s)
3 2001-11-05
TOSHIBA ZSD2012
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
:
www.loq.com
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