2SD1950 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C)
CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 ..
2SD1950-T1 ,Silicon transistorFEATURES _
q High DC Current Gain and good hFE' linearity.
hFE = 800 to 3 200 (@VCE = 5.0 V, IC = ..
2SD1953 ,NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
2SD1957 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SD1963 , Low saturation voltage. Excellent DC current gain characteristics.
2SD1975 ,Power DeviceAbsolute Maximum Ratings T = 25°CC 5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volt ..
31GF6 ,Ultrafast Plastic RectifierFeatures• Plastic package has Underwriters LaboratoriesFlammability Classification 94V-0• Glass pas ..
31GF6 ,Ultrafast Plastic Rectifier30-Jul-02 131GF6Vishay Semiconductorsformerly General SemiconductorRatings and Characteristic Curve ..
3214J-1-202E , 3214 - 5-Turn Trimpot® Trimming Potentiometer
3214J-1-203E , 3214 - 5-Turn Trimpot® Trimming Potentiometer
3214W-1-202E , 3214 - 5-Turn Trimpot® Trimming Potentiometer
3224W-1-104E , 3224 - 4 mm SMD Trimpot® Trimming Potentiometer
2SD1950
