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2SD1947A
TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING AND LAMP, SOLENOID DRIVE APPLICATIONS
TOSHIBA
2SD1947A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
25.1947A
HIGH CURRENT SWITCHING APPLICATIONS
LAMP, SOLENOID DRIVE APPLICATIONS
0 High DC Current Gain : hFE=500--1500 (Ic=1A)
0 Low Collector Saturation Voltage
.' VCE (sat) = 0.3V (Max.) (10 = 5A)
Unit in mm
.2 t0.2
2.7:02
5V6 MAX.
MAXIMUM RATINGS (Tc= 25°C) i?, '
CHARACTERISTIC SYMBOL RATING UNIT 0.75h0.15 - I
Collector-Base Voltage VCBO 100 V 2-54i0-25 2.54AO.25
Collector-Emi; Voltage VCEO 100 V lg 1 2 3 _:3- N
Emitter-Base Voltage VEBO 7 V sri,',"---??"-),'.,''.,
DC IC 10 2 - et'
Collector Current P 1 I 15 A
ll se CP l. BASE
Base Current IB 2 A 2. COLLECTOR
Collector Power Ta=25°C 2.0 3. EMITTER
. . . PC W
Dissipation Tc = 25°C 40 JEDEC -
Junction Temperature Tj 150 T JEITA -
Storage Temperature Range Tstg -55-150 C TOSHIB A 2-10R1A
EQUIVALENT CIRCUIT Weight : 1.7g (Typ.)
COLLECTOR
EMITTER
TOSHIBA 2SD1947A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 100V, IE = 0 - - 10 PA
Emitter Cut-off Current IEBO VEB = 7V, IC = O - - 10 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO 10 - 50mA, IB - 0 100 - - V
h V =1V, I =1A 500 - 1500
DC Current Gain FE (1) CE C
hFE (2) VCE = IV, 1C = 5A 150 - -
Collector-Emitter Saturation
Vol tage VCE (sat) IC - 5A, IB - 0.05A - - 0.3 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - 5A, IB - 0.05A - - 1.2 V
Collector-Emitter Forward
Vol tage VECF IE - 5A, IB - O - - 2.0 V
Transition Frequency fT VCE = 5V, IC = IA - 70 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 160 - pF
. OUTPUT
Turn-on Time ton 20/18 IN- 1B1 - 0.5 -
S h I H PUT - Cl
witc ing . B1 1,T, to
Time Storage Time tstg IL B2 - 6.0 - ps
. IBl= -1B2=0.05A, VCC
Fall Time tf DUTY CYCLE s 1% = 30V - 1.0 -
2 2001-11-05
TOSHIBA ZSD1947A
IC - VCE VCE - IC
COMMON
EMITTER
Tc = 25°C
COMMON EMITTER
IB =5mA Tc=25°C
10 20 40 60 80
COLLECTOR CURRENT 10 (A)
COLLECTOREMITTER VOLTAGE VCE (V)
0 4 8 12 16 20 0 2 4 6 8 10 12 14 16
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE - IC VCE - Ic
COMMON EMITTER
IB =5mA Tc= 100°C
COMMON EMITTER
Tc = - 55''C
10 20 40 60 80 150 200 10 20 40 60 80
COLLECTOR
COLLECTOR—EMITTER VOLTAGE VCE (V)
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT IC (A)
hFE - IC VCE(sat) - IC
COMMON EMITTER COMMON EMITTER
= 2 I /1 =100
Tc=100°C VCE IV a C B
a 1000 DV
2 25 :13
2 P,lif,
o -55 g m
e 'iiy
5 iiti, Tc=100oC
Co Mat
8 1 BS
50 8 -55
0.1 0.3 0.5 1 3 5 10 30 0.1 0.3 0.5 1 3 5 10 30
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
3 2001-11-05
TOSHIBA
VBE (sat) - IC
COMMON EMITTER
IC / IB = 100
BASE-EMI’I‘I‘ER SATURATION VOLTAGE
VBE (sat) (V)
0.1 0.3 0.5 1 3 5 10 30
COLLECTOR CURRENT IC (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
(1) NO HEAT SINK
(2) INFINITE HEAT SINK (Tc=25°C)
rm (“C I W)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
10 (A)
COLLECTOR CURRENT
10 (A)
COLLECTOR CURRENT
2SD1947A
IC - VBE
.. . COMMON
II! EMITTER
II I VCE=1V
12 f t I
8 I'll
4-Te--100t-, 25 -55
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
MAX. (PULSED) X
IC MAX.
(CONTINUOUS)
DC OPERATION
Tc = 25°C
X SINGLE NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
0.03 TEMPERATURE.
VCEO MAX.
1 3 5 10 30 50 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SD1947A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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