2SD1938 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD1938F ,Silicon NPN epitaxial planar typeElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD1941 , Silicon NPN Power Transistors
2SD1947A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING AND LAMP, SOLENOID DRIVE APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=500--1500 (Ic=1A)_m'OtO ollmli::l+lLn ..
2SD1950 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C)
CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 ..
2SD1950-T1 ,Silicon transistorFEATURES _
q High DC Current Gain and good hFE' linearity.
hFE = 800 to 3 200 (@VCE = 5.0 V, IC = ..
31DQ05 ,50V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
31DQ05-TR ,50V 3.3A Schottky Discrete Diode in a DO-201AD packageBulletin PD-2.305 rev. E 03/0331DQ0531DQ06SCHOTTKY RECTIFIER3.3 AmpMajor Ratings and Characte ..
31DQ06 ,60V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
31DQ06TR ,60V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
31DQ09 ,90V 3.3A Schottky Discrete Diode in a DO-201AD packageBulletin PD-2.306 rev. G 12/0331DQ0931DQ10SCHOTTKY RECTIFIER 3.3 AmpMajor Ratings and Charact ..
31DQ10 ,100V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
2SD1938
