2SD1784 ,Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier ApplicationsApplications High DC current gain: h = 4000 (min) (V = 2 V, I = 150 mA) FE CE C Low saturati ..
2SD1788 , Darlington Transistor(± 4A NPN)
2SD1788. , Darlington Transistor(± 4A NPN)
2SD1789 , Darlington Transistor(± 4A NPN)
2SD1790 , Darlington Transistor(± 4A NPN)
2SD1790 , Darlington Transistor(± 4A NPN)
31251 , SOLISTRAND, Budget and DIAMOND GRIP
31270 , SOLISTRAND, Budget and DIAMOND GRIP
3-16-1J , Wideband RF Transformers
3-16-1J , Wideband RF Transformers
31DF1 ,Conductor Products, Inc. - Rectifiers Ultra-Fast Recovery
31DF2 , 3 Amp. Glass Passivated Ultrafast Recovery Rectifier
2SD1784
Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington)
2SD1784 Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C) Note: 2SD1784 mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)