2SD1699 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oC)
***Pu|sed: PW s 350 us, Duty Cycle s 2 %
hFE Classifi ..
2SD1699-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
***Pu|sed: PW s 350 us, Duty Cycle s 2 %
hFE Classifi ..
2SD1699-T2 ,Silicon transistorFEATURES .
0 High DC Current gain.
0 Includes a dumpter diode at E-C.
ABSOLUTE MAXIMUM RATINGS ..
2SD1699-T2 ,Silicon transistorONEC
DATA SHEET
SILICON TRANSISTOR
2SDI 699
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIP ..
2SD1701 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC . . MAX.
NPN SILICON TRANSISTOR ..
2SD1702 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °c)
CHARACTERISTIC SYMBOL MIN. _ TYP. MAX. . UNIT _ TEST CON ..
30PDA60 , DIODE - 3A 600V TJ = 150C
30TPS12 ,1200V 20A Phase Control SCR in a TO-247AC packageFeaturesThe 30TPS.. SAFEIR series of silicon controlledrectifiers are specifically designed for med ..
30TPS16 ,PHASE CONTROL SCRFeaturesThe 30TPS.. SAFEIR series of silicon controlledrectifiers are specifically designed for med ..
30WQ03FN ,30V 3.5A Schottky Discrete Diode in a D-Pak packageBulletin PD-20559 rev. E 03/0330WQ03FNSCHOTTKY RECTIFIER 3.5 AmpD-Pak (TO-252AA)Major Ratings ..
30WQ03FN ,30V 3.5A Schottky Discrete Diode in a D-Pak packageapplications requiring low forward drop andsmall foot prints on PC board. Typical
30WQ03FNTR ,30V 3.5A Schottky Discrete Diode in a D-Pak packageapplications are in diskI Rectangular 3.5 AF(AV) drives, switching power supplies, converters, free ..
2SD1699
