2SD1662 ,Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Current Switching ApplicationsApplications Unit: mm High DC current gain: h = 1000 (min) (V = 3 V, I = 15 A) FE CE C Low ..
2SD1664 T100Q , Medium Power Transistor (32V, 1A)
2SD1664 T100Q , Medium Power Transistor (32V, 1A)
2SD1664 T100Q , Medium Power Transistor (32V, 1A)
2SD1664T100Q , Medium Power Transistor (32V, 1A)
2SD1664T100Q , Medium Power Transistor (32V, 1A)
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2SD1662
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Current Switching Applications
2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD1662 High Current Switching Applications High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A) Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C)
Equivalent Circuit Unit: mm
Weight: 4.7 g (typ.)
BASE
EMITTER≈ 2 kΩ ≈ 200 Ω
COLLECTOR
