2SD1614 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 0C)
CHARACTERISTIC . SYMBOL IMIN.
Collector Cutoff Current IC ..
2SD1614-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C)
CHARACTERISTIC . SYMBOL IMIN.
Collector Cutoff Current IC ..
2SD1614-T2 ,Silicon transistorFEATURES
''AcKt.elu?eey"oNs . World Standard Miniature Package
m ml imeters 0 High DC Current G ..
2SD1615 ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDFEATURESPACKAGE DIMENSIONS• World Standard Miniature Packagein millimeters• Low VCE (sat) VCE(sat ..
2SD1615 ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDDATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDES ..
2SD1615A ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONSCol ..
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..
30BQ015 ,15V 3A Schottky Discrete Diode in a SMC packageapplications are in disk drives, switchingwaveformpower supplies, converters, free-wheeling diodes, ..
30BQ015 ,15V 3A Schottky Discrete Diode in a SMC packageapplicationsUltra low forward voltage dropV @ 1.0Apk, T = 75°C 0.30 V F J High frequency operationG ..
30BQ015PBF , Schottky Rectifier, 3.0 A
2SD1614
