2SD1428 ,Silicon NPN Power Transistors TO-3PH packageTOSHIBA 4H)TSCRETE:/0PT()y Si, s)ii:llruvri'aso DDDFIEI: Cl r9097250 TOSHIBA CDISCRETE/OPTO) 56C 07 ..
2SD1431 , NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
2SD1435 , Silicon NPN Power Transistors
2SD1437 , NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SD1437 , NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SD1439 ,SILICON NPN TRIPLE DIFFUSED JUNCTION MESA TYPE HORIZONTAL DEFLECTION OUTPUTAbsolute Maximum Ratings (Tc=25°C) ''iifi el g I t 1.1k0.1 ,. _ 0.8max "ll'Item I Symbol Value Umt ..
30700-1080 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 8 Circuits, Polarization Option 1Gray
30700-1120 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 12 Circuits, Polarization OptioGrayn
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..
30BQ015 ,15V 3A Schottky Discrete Diode in a SMC packageapplications are in disk drives, switchingwaveformpower supplies, converters, free-wheeling diodes, ..
2SD1428
Silicon NPN Power Transistors TO-3PH package
TOSHIBA I1)ISCRETE/0PT0Y Si, oii:Fvri'esrs unmqbb Cl Ir
9097250 TOSHIBA (DISCRETE/OPTO) - 56C 07966 Llii32Sr.Liik.
SILICON NPN TRIPLE DiFFUSED'MESA TYPE 2S01 42
Unit in mm
COLOR TV HORIZONTAL OUTPUT APPLICATIONS. mom. xme'xaz 1.5
0‘ "’1 " ?nl
FEATURES.. . 4' - L: J,-
. High Voltage l VCBO=1500V w' C..--.', o
. Low Saturation Voltage g oe?,
, VCE(sat)= -.5V(Hax ) (Ic=5A, IB=1A) o S =
. High Speed , t.f=1 0ps(Max. ) ol N
. 'Built-in Damper Type _ 'i'o,f ",si'o
. Glass Passivated Collector-Base-Junction 'll as'
MAXIMUM RATINGS (Tc=25°C) . g
CHARACTERISTIC SYMBOL RATING UNIT g
Collector-Base Voltage VCBO 1500 ll
Collector-Emitter Voltage VCEO 600 ll
Emittett-Baae Voltage VEBO S v L BASE
Collector Current Ic 6 A a COLIIECT°R(HEAT SINK)
3. EMITTER
Emitter Current _ IE -6 A JEDEG -
Collector Power Dissipation
(Tc=25°C) PC 80 w EIAJ -
J l T T 150 o TOSHIBA JH6DIA
unct on emperature d Weight t 5.2g
Storage Temperature Range Tseg -55--150
EQUIVALENT CIRCUIT COLLECTOR
BASE :
3500‘ 'tre,) EMITTER
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP, MAX. UNIT
Collector Cut-off Current ICBO VCB=500V, IE=0 - - 10 ph
Emitter-Base Breakdown Voltage V(BR)EBO IE=200mA, IC=0 5 - - ll
DC Current Gain hFE VCE=5V, Ic=1A 8 12 -
Collector-Emi) = = -
Saturation Voltage VCE(sat) IC 5A, IB IA 3 5 V
Base-hitter Saturation Voltage VBE(sat) IC=5A, IB=1A - - 1.5
' Forward Voltage (Damper Diode) --lh, IF=6A - 1.6 2.0
Transition Frequency fT VCE=10V, IC=0.1A - 3 - MHz
Collector Output: Capacitance ' Cob VCB=10V, IE=0, f---Irmz - 165 - pF
Fall Time (Fig.) tf Icp=5A, Im(end)=lA - 0.5 1.0 as
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA {DISCRE
TE/OPTO} Si, DE Dana'sasu 000735? I [T
I i:iicriic..sc'.st; 3;: _ C." 'Ir-cr''!:'.-',"':':" Iv''? .3?” Js, (r ' r, “\h '. _ t -'. I
9097250 TOSH IBA (DISCRETE IOPTO) ' "#750567 967” - D Ti. 33'13
Fig. tf TEST CIRCUIT
CURRENT PROBE
as Cti 15A 10M 100M“
in t, o g
- . . . 3. d "
.‘2302482 :1
at5gts
l 635m;
. . 106it
BASE CURRENT
COLLECTOR CURRENT
I TOSHIBA CORPORATION IIHIIIIHHIIllllllmflllllllllllllllllIllllllllllllIlmllllllllllllllllllllllllllllIllllllllllllllllHllllllllllllllIllllllllIllllllllllllllll|IllllllllllII|llllllflllllllIIIllllllIH|IlllllllllllllllllllllllIlll|lll
This Material Copyrighted By Its Respective Manufacturer
TOSHIBK II)ISCRETE/'0PT01
9097256 Tosmék tbrscmrrE/oisToy . 5663766 D 7-3343
_.' 'rs 2801428
Io .-- VCE hFE - Ic
C0LLmT0R-EMrTTeR voviwit, V0,}; ii/f
céLLEc'ron—EMIMER SATURATION
VCE( sat)
VOLTAGE
BASE CURRENT
COLLECTOR POWER DISSIPATION
1’0 (W)
0 25 50
This Material Copyrighted By Its Respective Manufacturer
COMMON
EMITTER
Tc = atity
IB = 50mA
8 12 16
20 y "
VCE( sat) T TB
_ COMMON
EMITTER
Tc=253'
0.8 1.2 1,tf f 2.0 a4
18 Ca)
vi,--u,
'm 100 las 150 1'75 800
TEMPERATURE Te (°C)
DC CURRENT GAIN
COLLECTOR CURRENT 1c (A)
Ic (IDA)
COLLECTOR CURRENT
COMMON EMITTER
VCE=5V
100 ayo, 1000 3000 10000
COLLECTOR CURRENT 10 (mA)
Ic - VBE
COMMON EMITTER
To = aty"C
0.8 1.2 1.6
BAtNg-gBirTTMt VOLTAGE VBE (V)
SAFE QPERAT ING AREA
Ic MAX.(PULSED)
TC MAX~(PULSED)»
I MAX.
(comn-
Nuous) 00
I. SINGLE
NONREPETITIVE
PULSE To = 25°C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE
VCBO=1500v
1000 3000
GOLLE(T0ft--EMI'rTgTt VOLTAGE VGE (V)
t Illll"lllllllllllllllllllllllllllllllllllImlilllllll|llllIIIH||Illllllllll||lllllllllllllllllllllllllHIllllllllllullllllllllIIIll|Ill|llIll|lllllllllllllllllllllllllllllllIIHlllllIllllllI|IllHll|lllllllllllllllll TOSHIBA CU FIPUFIATION
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