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30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
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2SD1415A
Silicon NPN Power Transistors TO-220F package
TOSHIBA 2SD1415A
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON)
ZSI’MMSA
HIGH POWER SWITCHING APPLICATIONS Unit in mm
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS mos =i f3.210.2 mm
J C,', m -
0 High DC Current Gain t' tt o m ts,
: hFE = 2000 (Min.) (VCE = 3 V, IC = 3A) E '/2
0 Low Saturation Voltage .' VCE (sat)" 1.5V (Max.) (10 = 3A) Jt 1.1 I l In . _
MAXIMUM RATINGS (Tc = 25°C) l l S;
0.75 10.15. ' . -
CHARACTERISTIC SYMBOL RATING UNIT
25410.25 2.54:0.25
Collector-Base Voltage VCBO 120 V -, '
. 3, 1 2 3 , eq
Collector-Emitter Voltage VCEO 100 V 'i''r-.lrrrmrirr,,1." d
Emitter-Base Voltage VEBO 6 V g 1 l tl
'ci
DC I 7
Collector Current C A 1. BASE
Pulse ICP 10 2. COLLECTOR
Base Current IB 0.7 A 3. EMITTER
Collector Power Ta = 25°C 2.0
P JEDEC -
Dissipation Te = 25°C C 25 W
Junction Temperature Tj 150 'C JEITA -
Storage Temperature Range Tstg -55-150 T TOSHIBA 2-10RIA
Weight : 1.7 g (Typ.)
EQUIVALENT CIRCUIT
COLLECTOR
EMITTER
1 2001-11-05
TOSHIBA 2SD1415A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 100V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 6V, IC = 0 0.75 - 3.0 mA
Collector-Emi;
Breakdown Voltage V (BR) CEO IC - 50 mA, IB - 0 100 - - V
. hFE (1) VCE = 3 V, IC = 3 A 2000 - 15000
DC Current Gain hFE (2) VCE = 3 V, IC = 6A 1000 - -
Collector-Emitter
Saturation Voltage VCE (sat) 1C - 3 A, 1B - 6mA - os 1.5 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - 3 A, IB - 6mA - 1.5 2.0 V
OUTPUT
Turn-on Time ton - 0.3 -
Switchin
Tim e g Storage Time tstg - 5.1 - (rs
. 1B1 = -IB2 = 6mA, VCC
Fall Time tf DUTY CYCLE s 1% = 45 V - 0.6 -
TOSHIBA
10 (A)
COLLECTOR CURRENT
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMIT’I‘ER SATURATION
VOLTAGE VCE(sat) (V)
IC - VCE
COMMON
EMITTER
Te = -50'C
IB = 0.4 mA
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VCE
COMMON 1.8 2.0 , /
EMITTER 1.6 ’
Tc=100°C 1.4 I , z/
1.0 "p" ’ C.. "
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB = 500
Te = -500C
'01 1 10 100
COLLECTOR CURRENT IC (A)
2SD1415A
IC - VCE
COMMON /
EMITTER 1.6
F.)] Tc=25°C 1.8 er J'.'
S? 2.0 // x c,..
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
1 hFE - IC
COMMON
EMITTER
VCE = 3 v
= 10000
a To = 100°C
a: 1000
0.01 0.1 1 10 100
COLLECTOR CURRENT IC (A)
VBE (sat) - IC
COMMON EMITTER
IGIIB = 500
Tc = -50''C
BASE-EMITTER SATURATION VOLTAGE
VBE (sat) (V)
‘0.1 1 10 100
COLLECTOR CURRENT IC (A)
TOSHIBA 2SD1415A
IC - VBE SAFE OPERATING AREA
COMMON
a EMITTER s
v I MAX. (PUL E)
VCE = 3 V / I C .
S? 6 I 10 100 psyd.
I 1 msik
z 10 msX
E / 10 MAX. 100 msX
5 4 I I Cii. 3 (CONTINUOUS)
o , I F 1
E3 2 a DC OPERATION
g Tc = 100°C f I tttttt Te = 25°C
0 25°C - o
I / 50 C 8
0 I _ l g 0.3
o 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 5
BASE-EMITTER VOLTAGE VBE (V) j
X SINGLE
NONREPETITIVE PULSE
0.03 Tc = 25°C
Curves must be derated
linearly with increase in VCEO MAX.
temperature.
1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
4 2001-11-05
TOSHIBA 2SD1415A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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