2SD1410A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS.APPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE = 2000 (Min.) l F --(Vnw=2V- In=2A) t ..
2SD1413 ,Silicon NPN Power Transistors TO-220Fa package
2SD1413 ,Silicon NPN Power Transistors TO-220Fa package
2SD1413. ,Silicon NPN Power Transistors TO-220Fa package
2SD1414 ,Silicon NPN Power Transistors TO-220Fa package
2SD1414 ,Silicon NPN Power Transistors TO-220Fa package
305UR160 ,Standard recovery diodeapplicationsMajor Ratings and Characteristics301U(R)Parameters Units80 to 200 250I 330 300 AF(AV)@ ..
30700-1080 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 8 Circuits, Polarization Option 1Gray
30700-1120 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 12 Circuits, Polarization OptioGrayn
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..
2SD1410A
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS.
TOSHIBA 2SD1410A
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
ZSI’MMDA
IGNITER APPLICATIONS Unit in mm
HIGH VOLTAGE SWITCHING APPLICATIONS
2102 2.7102
0 High DC Current Gain .. hFE = 2000 (Min.) .
(VCE22V, 1022A) g
MAXIMUM RATINGS (Tc = 25°C) g
CHARACTERISTIC SYMBOL RATING UNIT 0.75:0.” E
Collector-Base Voltage VCBO 300 V 2.5tl*0.25 2 + 2 '
Collector-Emi) Voltage VCEO 250 V . - . . - .
Emitter-Base Voltage VEBO 5 V if', l 2 3 _" g
Collector Current IC 6 A s,':,?---??' Iii',':
Base Current IB 1 A o
Collector Power Ta = 25°C PC 2.0 W l. BASE
. . . - o - o 2. COLLECTOR
Dissipation (Tc - 25 C) Te - 25 C 25 3. EMITTER
Junction Temperature Ti 150 T
Storage Temperature Range Tstg -55-150 T JEDEC -
JEITA -
EQUIVALENT CIRCUIT TOSHIBA 2-10RIA
COLLECTOR Weight : 1.7 g (Typ.)
L ---------------
EMITTER
1 2001-11-05
TOSHIBA 2SD1410A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 300V, IE = O - - 0.5 mA
Emitter Cut-off Current IEBO VEB = 5 V, 10 = 0 - - 0.5 mA
3:11:22r-Emitter Breakdown V(BR) CEO IC = 0.5 A, L = 40 mH 250 - - V
DC Current Gain 'gt g; $3: : :3: i8 : i: 2233 I I
(t2Ctr-Emitter Saturation VCE (sat) IC = 4A, IB = 0.04 A - - 2.0 V
52:;23itter Saturation VBE (sat) IC = 4A, IB = 0.04 A - - 2.5 V
Collector Output Capacitance Cob 2B, 13123 V, IE = o, - 30 - pF
Turn-on Time ton IN- OUTPUT - 1 -
t.fthing Storage Time tstg - 8 - gs
. 1B1 = -IB2 = 0.04 A, VCC -
F all Time tf DUTY CYCLE s 1% = 100V 5 -
2 2001-11-05
TOSHIBA 2SD1410A
Ic - VCE hFE - IC
COMMON 10000
A EMITTER Tc = 100°C
S Tc=25°C 5000
S? J? 3000
H 1000
8 'f, 500
j g 300
8 COMMON EMITTER
VCE = 2 v
0 1 2 3 4 5 6 7 8 0.03 0.1 0.3 1 3 10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE(sat) - IC SAFE OPERATING AREA
COMMON EMITTER
MAX. P L ED )k.
IC/IB=100 10 (PU S )
IC MAX. 100 ms
5 (CONTI-
NUOUS)
DC OPERATION
0.5 (Te = 25°C)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
0.05 0.1 0.3 1 3 10 0.3
COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 10 (A)
VBE (sat) - IC 0.1
COMMON EMITTER
IC/IB = 100
X SINGLE NONREPETITIVE
0.03 PULSE Te = 25°C
CURVES MUST BE DERATED
LINEARY WITH INCREASE IN
TEMPERATURE. VCEO MAX.
3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
BASEEMITTER SATURATION
VOLTAGE VBE (sat)
0.05 0.1 0.3 1 3 10
COLLECTOR CURRENT 10 (A)
3 2001-11-05
TOSHIBA 2SD1410A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
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