2SD1409A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONSAPPLICATIONS Unit 1n mm_1010.3 ' (#32102 2,7ur0.2TThrh DC Current Gain . hum = 600 (Min)vv- - v--v- ..
2SD1410 ,6A; 25W; V(ceo): 250V; NPN darlington transistor
2SD1410 ,6A; 25W; V(ceo): 250V; NPN darlington transistor
2SD1410A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS.APPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE = 2000 (Min.) l F --(Vnw=2V- In=2A) t ..
2SD1413 ,Silicon NPN Power Transistors TO-220Fa package
2SD1413 ,Silicon NPN Power Transistors TO-220Fa package
305UR160 ,Standard recovery diodeapplicationsMajor Ratings and Characteristics301U(R)Parameters Units80 to 200 250I 330 300 AF(AV)@ ..
30700-1080 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 8 Circuits, Polarization Option 1Gray
30700-1120 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 12 Circuits, Polarization OptioGrayn
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..
2SD1409A
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS
TOSHIBA 2SD1409A
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
2SD1l409A
IGNITER APPLICATIONS INDUSTRIAL APPLICATIONS
HIGH VOLTAGE SWITCHING APPLICATIONS Unit m mm
2:01 27:02
0 High DC Current Gain : hFE = 600 (Min.)
(VCE=2V, 1022A) Q
o Monolithic Construction with Built-In Base-Emitter Shunt E
Resistor.
MAXIMUM RATINGS (Ta = 25°C) 0.7510.15
CHARACTERISTIC SYMBOL RATING UNIT 2-54 i 0.25 2.54 i 0.25
Collector-Base Voltage VCBO 600 V tl','-',. _:3' N.
Collector-Emitter Voltage VCEO 400 V 'ij.:--ejE' 3:;
Emitter-Base Voltage VEBO 5 V o Q
Collector Current IC 6 A 1. BASE
Base Current IB 1 A 2. COLLECTOR
3. EMITTER
Collector Power Ta = 25°C P 2.0 W
Dissipation Tc = 25°C C 25 JEDEC -
Junction Temperature Tj 150 "C EIAJ SC-67
Storage Temperature Range Tstg -55--150 T TOSHIBA 2-10R1A
Weight .. 1.7 g
EQUIVALENT CIRCUIT
COLLECTOR
---------- "ifrinrrER
000707EAAI
OTOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the res onsibility of the buyer, when utilizing TOSHIBA products, to compl with the standards of safety in
making a sa e design for the entire system, and to avoid situations in which a malgimction or failure of such TOSHIBA
products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set
forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set
forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics applications (computer,
personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These
TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high
quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury
("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments,
transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of
safetylievices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's
own ris .
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
2000-10-27 1/4
TOSHIBA 2SD1409A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 600V, IE = O - - 0.5 mA
Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 - - 3 mA
Collector-Emi) Breakdown
Voltage V (BR) CEO IC - 10 mA, IB - 0 400 - - V
. hFE (1) VCE = 2V, IC = 2A 600 - -
DC Current Gain hFE (2) VCE = 2V, IC = 4A 100 - -
Co11ector-Emitter Saturation
Vol tage VCE (sat) IC - 4A, IB - 0.04A - - 2.0 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 4A, IB - 0.04A - - 2.5 V
Emitter-Collector Forward
Voltage VECF IE - 4 A, IB - 0 - - 3.0 V
Collector Output Capacitance Cob VCB = 50V, IE = 0, f = 1 MHz - 35 - pF
. OUTPUT
Turn-on Time ton 20 ,us £1}le IBIr - - 1 -
. hi I H a-tEt-h
1yitc mg Storage Time tstg B1 I 2,' - 8 - ,as
Time 1B2 L -------e-"
. IBI = -1B2 = 0.04 A, V
Fall Time tf DUTY CYCLE s 1% 1ffi, - 5 -
2000-10-27 2/4
TOSHIBA
IC - VCE
COMMON
2 EMITTER
V Tc = 25°C
0 2 4 6 8 10 12 14 16
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB = 100
0.03 0.1 0.3 1 3 10
COLLECTOR-EMITTER SATURATION
VOLTAGE vows“) (V)
COLLECTOR CURRENT 10 (A)
IC - VBE
COMMON EMITTER
5 VCE = 2V
Tc = 100°C 25
COLLECTOR CURRENT 10 (A)
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
BASE-EMITTER VOLTAGE VBE (V)
DC CURRENT GAIN hFE
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
COLLECTOR CURRENT 10 (A)
2SD1409A
hFE - IC
3000 Tc = 100°C
COMMON
EMITTER
25 VCE = 2 V
500 -55
0.01 0.03 0.1 0.3 1 3 10 30
COLLECTOR CURRENT 10 (A)
VBE (sat) - 10
COMMON
EMITTER
IC/IB = 100
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT 1C (A)
SAFE OPERATING AREA
MAX. (PULSED) IT.
IC MAX.
5 (CONTI-
3 NUOUS)
10 msX
0.5 100 ms)k.
DC OPERATION
(Tc = 25''C)
IT. SINGLE NONREPETITIVE
0.05 PULSE Te = 25''C
Curves must be derated lineary
with increase in temperature.
VCEO MAX.
3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2000-10-27 3/4
TOSHIBA 2SD1409A
rth - tw
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA. NO HEAL SINK
(SINGLE NONREPETITIVE PULSE)
INFINITE HEAT SINK
TRANSIENT THERMAL RESISTANCE
rm (°C/W)
0.001 0.01 0.1 l 10 100 1000
PULSE WIDTH tw (s)
2000-10-27 4/4
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