2SD1408 ,SILICON NPN TRIPLE DIFFUSED TYPEAPPLICATIONS._. High Power Dissipation , Pc=25W’(Tc=25°G)' Saguration VoltageUnit in mm
2SD1409 ,Silicon NPN Power Transistors TO-220Fa package
2SD1409A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONSAPPLICATIONS Unit 1n mm_1010.3 ' (#32102 2,7ur0.2TThrh DC Current Gain . hum = 600 (Min)vv- - v--v- ..
2SD1410 ,6A; 25W; V(ceo): 250V; NPN darlington transistor
2SD1410 ,6A; 25W; V(ceo): 250V; NPN darlington transistor
2SD1410A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS.APPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE = 2000 (Min.) l F --(Vnw=2V- In=2A) t ..
305UR160 ,Standard recovery diodeapplicationsMajor Ratings and Characteristics301U(R)Parameters Units80 to 200 250I 330 300 AF(AV)@ ..
30700-1080 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 8 Circuits, Polarization Option 1Gray
30700-1120 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 12 Circuits, Polarization OptioGrayn
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..
2SD1408
SILICON NPN TRIPLE DIFFUSED TYPE
TOSHIBA II)ISCREyI'C/'0PT01 Si, oirl]mon'i'asn morrvws% ll
9097250 TOSHIBA (DISCRETE IDPTO) ''""'2''''trCC"0W") '/5 _ -o "r- a a - "
2S01408, .. _ . , SILICON NPN TRIPLE DIFFUSED TYPE E
y . 'H
. POWER AMPLIFIER APPLICATIONS. . .
. r _ Onit 1n mm
I F I .. I . . . mum .
' FEATURES: '.' k . s . _ _ ' _ v.0 mama
. . o . t I
V . High Power Dissipation , Pc=25W (Tc=25 c) ', . rt.fipie'--Te-,, fl n :-
. . _ . e4
. Good Linearity 051-th l _ . : ' _ ' ' jit " ' li
. _ ". . _ - . R
f Comp1eimette.ary to 2831017 . .. g ' cc,
. Recommdndeii"for 20-25H.High FIidelity A'udiojrequency d l! ' . . l
Amplifier Output Stage. . _ ' ' - 14 Y-l-a 'f-,'; .
_ x . Vi
. . _ _ l . _ td
. _ , o . . ". 0761211212 q r-l 1
MAXIMUM RATINGS (TA=I25 C) . _ 254.}025 25411025
. CHARACTERISTIC SYMBOL RATING UNIT mo ti
Co11ectror-Base. Voltage VCBO 80 V i? 3 E
Co11eetoc-Emiteer Volta e Al 80 V d, I I tl
g . . CEO _ I t l.) l' E] _
Emitter-Base Voltage , .VEBO Z 5 V I
qulector Current'; e . '.t _ Ic - '4 A I. BASE
- . . R. copmcq‘on
Base Current . IB . Q24 A . ia-EMJTTER
Collector Foyer. Dissipation I . -' - JEDEC l -
(Té=25°C) . . Pal ' L . 25, If El Al _ -
I Junctipn Temperéture‘ v'. _ _ ij " 150 oc TOSHIBA 'V-lol.,"
; Storage Temperature Range ' Tstg -5rs 150 0C Weight t 2.1g
5 ELECTRICAL CHARACTERISTICS Os-ct/c) '
I CHARACTERISTIC _ SYMBOL TEST CONDITION MIN, TYP. MAX. UNIT .
t _ ' . '
i Collector: Cut-oft Current Taro chf80v, IE=O - - 30 " i:
. . ", I
, Eruetesr-cue-of.fucurrent . T} IEBO .‘ijBgSV, IC=0 - - 100 ul} ,
l Collector-Emitter V - _ - t - 1
Breakdo‘wn Voltage . _ ' . . IV(BR)CEO IC-SomA’ IB='0 80_ . V ,"
Emitter-'Basa _ - _ . - '
BreakdovnA61tage Fs . . _ V(LBEWBO TE lOmA, Ic---0 .5 - ll .
. ' fr.- ," hmt I) = = -
DC CurrIentIszIain . . I (Noté) .VCE pv, 10 0.5A . :40 I 240
_ V th‘Em ,vcg=sv, Ic=3A _ _ '15 :50 -
. Collector-ual, I. I L. = ' ' - .
"Saturation Voltage VCE(sat) Ry=3A, IBe0.3A 0.45 1.5 ll .
' .Base-Eptitter Voltage' I- _ ' VBE .. 1lar=5Y, Ic=3A - - 1.0 1.5
Transition. Frequency ': F . .fT ch=5V, Ic=0. 5A _ _ = 8. 0 - MHz .
Collectbi Output Capacitance" _ Cob VCB=10V, IE=0, f=1MHz - 90 - pF
Note t hFE(1) Classification R , hors 80, O t 7IO~11+0, Y t 120--240
I . :I'DBHIBA CORFDRATIDN lIHIIIIHHIIIHlllllmllmllllllllllllllllllllllmllllllllllllllIIIIIIIIIIIIIIHIllllllllllllllllllllllll|Illl|l|||ll||llllllllllllIIHIIIIHIIIIHIllmllllllllIIIHIIllllllllllllllllflllllllllllllllllllllllllllllll
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA 4:IyIstyu:TE/(yii'0i _ W '_5E._1>E||=In=I?asn 0007901. Ll T
""""" 9097250 TOSHIBA (DISCRETE/OPTO) 58‘5‘717940 ofias-oe "
i - . g. -, 2S01408..
u IO - vyo _ .
A COMMON '
, ct Ci, EMITTfm
o ' J? vor "
'Ct .. . -
0 L6 1B=30 mA g
g - . F'
E . comaqu EMITTER g
a t1tl To=z " .4
FA . O
.0 _ . . o
. . . ' . 0
. W9bLEi9T0R--gNPr'Ngtt vom'Adn; .votg (v)' . BASE’EMITTER VOLTAGE VBE (V) . .
. hgar-- to t ". VCE(Bat) - Io
. V .'. . I . 6
tl common EMITTER- common mu TTER
A V0E=5V a'?t,Ir, 1 Ic/IB=10
Pt 30 "tl
_ H Em A
H a q ts.
d; o v 0.5
E4 10 I z "2 als
2 ttl O g
E 50 E3 2: ta"
- z: 0
o GO 3% k' 1
8 g g 005
10 - 003
0.005 aol 00:5 01 0.3 1 a 5 0.00:3 0.01 003 01 03 1 3 5
conwcwoa QURRENT re (A) , COLLECTOR CURRENT 10 (A)
PC - Ta . SAFE OPERATING AREA
- I l I I I ll”
Tercr-Ttx 10- 1C MAX (PULSEDV:e
INFINITE HEAT smx -
z Go I I I I I III! ‘V
t! tf, 5- to MAX (CONTINUOUS) Ro, 075
'y, 2 J] x’ V" ,
g g H G l 060 f-l-'
H a A Tsl
“V 20 ii "se'
SIM g 1 " (b\x
a 16 o I
In 0-1 I l
o g atsr-M swam: NONREPETITIVE "d""'""
E 10 a -. PULSE Tc=25‘C .""-"" 's
CI a 0.8- g -
' g g -CURVES MUST BB DERATED o ..--
o 5 o LINEARLY WITH INCREASE h g
. - _ IN TEMPERATURE ts 1 '
. al I t I I l I III I I t .
25 50 Tti 10 125 160 1-75 1 5 10 GO 100 '
AMBIENT TEMPERATURE? " Ctr) COLLECTOR-tWIT'?) vommm VICE (v)
i F lllllll"llllHI"|lllllllllllIHIIIHHIIIIHII|IllllHllllllllllll"IlllllllllllIllllllllImlllllllIIII|IllIIIHIHIIHHIlllllllllllllllIIIllIllllllIlllIlllfll|IlllllIlll[IIllllIllIIIIIHIIIIIllllllllllllllllllllllllTDBH!BA CUHFHRAT‘DN _
This Material Copyrighted By Its Respective Manufacturer
www.ic-phoenix.com
.
