2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1407A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD1407A. ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SD1407A-Y , Power Amplifier Applications
305UR160 ,Standard recovery diodeapplicationsMajor Ratings and Characteristics301U(R)Parameters Units80 to 200 250I 330 300 AF(AV)@ ..
30700-1080 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 8 Circuits, Polarization Option 1Gray
30700-1120 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 12 Circuits, Polarization OptioGrayn
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..
2SD1406
Silicon NPN Power Transistors TO-220Fa package
: .", I 2801] 4.6 '. " SILICON NPN TRIPLE DIFFUSED TYPE
AUDIO FREQUENCY POWER AMPLIFIER APPLIéATIONS.,
Unit in mm
FEATURES: - w GMAX,
- Ro Aast:ea2
. High DC Current Gain t hFE=300(Max.)(VcE=5V, Ic=0.5A) d
' Low Saturation Voltage J g g 3
t VCE(sat)=l.0V(Max.)(Ic=3A, IB=0.3A) 3 " g
. High Power Dissipation I PC=ZSW (Tc=25°C) fl l '4
. Complementary to 2831015_! 1-2 f.
MAXIMUM RATINGS (Ta=25°C) 3;
CHARACTERISTIC SYMBOL RATING UNIT H _
Collector-Bare Voltage _ VCBO 60 V , a"d"I'"s.
Collector-Emi- Voltage VCEO 60 ll 5% E
thitter-Base Voltage VEBO 7 ll tl, cd t.
Collector Current lo 3 A . __
Base Current - . . In 0.5 A I. BASE
Collector Power Ta=25°c P 2.0 w a o0hLEl0TOR'
pissipatiOn Tcrash, C 25 a EMITTER
t o JEDEC -
Junction Temperature g Td ' 150 BTAJ -
Storage Temperature Ra'hge Tstg -55s150 "c TOSHIBA 2-10LIA
" ' . Height t 2,1g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP, MAX. UNIT
Collector Cut-off Current raw VcB=6OV, IE=0 - - 100 . AA
Emitter Cut-off Current IEBO VEB=7V, Ic=0 - - 100 ttA
Co11ector-Emi'teer - _
Breakdown Voltage V(BR)CE0 Ic--50mh, IB---0 60 ll
DC Current Gain hFE(Note VCE=5V, IC=0.5A 60 - 300 -
Collector Emitter - - _
Saturation Voltage VcE(sat:) TC=3A, IB~O.3A 0.25 1.0 v
Base-Emitter Voltage VBE VCE=5V, IC=O.5A - 0.7 1.0 ll
Transition Frequency . fr VCE=5V, IC=0.5A - 3.0 - MHz
Collector Output Capacitance Cob VCB=10V, Ig=0, f=1MlIz - 70 - pF
Turn-on Time ton 20/tts man Ltr. OUTPUT - 0.8 -
IBI - (5
Switching Time Storage Time tstg 132 I32 H - 1.5 - .as
. 1Br=-1B2=a2A VCC=30V ,
Fall Time Cf DU.” CYCLE<1% - 0.8 -
Note t hFE Classification 0 t 60--120, Y I 100--200, GR t 150--300
TOSHIBA CORPORATION HIllllllllllllllllllllllllllulllllljllllllllllllIlllllllllllllllllllllllllllllllIfllllllllllIlllflllll|llll|lllllllllllHllllllllllllllllllllllllIIIHIIIIIIHIIlllllllllllllllll|IHIIIIIIHIIIIIHIIIIIIHIHIIlllllllll
. 2801406
Io - VCE IO - VBE
A A :10
c, 60 Cl, f COMMON
O 50 C3 EMITTER
H 40 H
. It =5v
m f j w
E g 2.0
a 21) E e tty In]
to A to o Pt ‘IV
co I =10mA 0 7
'g g 1.0 o
H COMMON EMITTER g I I j
g Tc=25'C l, /
8 o 8 ,j
o z 4 6 0 (14 (18 1.2 1.6
COLLECTOR-EMITTER VOLTAGE VCE (v) BAStl-EMIT'Nilft VOLTAGE VBE (v)
ME - 1c VCE(sat) - 10
common EMITTER : COMMON EMITTER
tl V0E=5V é; t15 Tc." 18: IO
300 E: A as
3‘. Tor=10o'0 m g;
< ti IO
a M 01
s 1 a >0
ti I (105
C2 8 M (103
tl CI . a 1 10 o)r a 3 1
COLLECTOR CURRENT Io Ca) COLLECTOR CURRENT IC (A)
. SAFE OPERATING AREA
1000 Rth(t)- t V 10 l l I11Tr|
I MAX. PULSED kt.
M (1)wrmourr HEAT SINK A C ( ,
co a: l l I 1‘! lil
, W) INFINITE HEAT SINK v 5 I I l I Illl
a o F 10 HAX.(CONTINUOUS)
g 100 H G
'ri. tc'' bi j
ii'" 10 k" g
E T; 0 1 ls
E fi (2) T ‘25'C n: \
H u: c” B 33-511mm: tl0tlRBPBTI'I'I1nir , j
E 1 g (15- FULSE Tc=25'C ,
g g ~cunvms MUST BE DERATED g-
g o -LrNRARLY WITH INCREASE o.
M IN TEMPERATURE >
be 02 n ' n I tLkgs Ill
. lo- 1 10 102 L s 10 so 100
TIME t (Bee) C0LUECT0it-lilMITTRR VOLTAGE VCE (v)
IlllIll|ll|lllllllllllllllllll|IHullllllllllllllmlllllllllllllllllllllllllllllllllllllllllllHl||lllllllllllllllllllllIIIIIXlllllllIlllllllIlllllllllllllllllllllulllllllllllllllllllIIlHl||IIHIIIIIHIIIHIHI|||Il| TOSHIBA CORPORATION
www.ic-phoenix.com
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