2SD1250 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitV I = 500 µA ..
2SD1250 ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit(6.5)Collector-base voltage (Emitter ..
2SD1251 ,Silicon NPN triple diffusion junction type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C2.54– 0.35.08– 0.5Parameter Symbol Ratings Unit 1:Base13 22:C ..
2SD1257 ,Power DeviceFeatures• Low collector-emitter saturation voltage VCE(sat)0 to 0.4• Satisfactory linearity of forw ..
2SD1258 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD1259 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max Unit2SD1259 V I ..
30410 , Flexible ferrite absorber platte
30485 ,FCI by Honeywell - Fire Fighter Phone Accessories
30546 , TRANSFORMER
30546 , TRANSFORMER
30546.. , TRANSFORMER
305UR160 ,Standard recovery diodeapplicationsMajor Ratings and Characteristics301U(R)Parameters Units80 to 200 250I 330 300 AF(AV)@ ..
2SD1250
