2SD1221 ,Transistor Silicon NPN Diffused Type (PCT process) Audio Frequency Power Amplifier Application2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Powe ..
2SD1221 ,Transistor Silicon NPN Diffused Type (PCT process) Audio Frequency Power Amplifier Application2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Powe ..
2SD1222 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..
2SD1222 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switch ..
2SD1223 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..
2SD1224 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier ApplicationsApplications High DC current gain: h = 4000 (min) (V = 2 V, I = 150 mA) FE CE C Low saturati ..
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30546 , TRANSFORMER
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30546.. , TRANSFORMER
2SD1221
Transistor Silicon NPN Diffused Type (PCT process) Audio Frequency Power Amplifier Application
2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process)
2SD1221 Audio Frequency Power Amplifier Application Low collector saturation voltage
: VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation: PC = 20 W (Tc = 25°C) Complementary to 2SB906
Maximum Ratings (Ta = 25°C) Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
