2SD1220 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier ApplicationsApplications Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C)Characteristics Sym ..
2SD1221 ,Transistor Silicon NPN Diffused Type (PCT process) Audio Frequency Power Amplifier Application2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Powe ..
2SD1221 ,Transistor Silicon NPN Diffused Type (PCT process) Audio Frequency Power Amplifier Application2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Powe ..
2SD1222 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..
2SD1222 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switch ..
2SD1223 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..
30405 , Flexible ferrite absorber platte
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30546 , TRANSFORMER
30546 , TRANSFORMER
30546.. , TRANSFORMER
2SD1220
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications
2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SD1220 Power Amplifier Applications Complementary to 2SB905
Maximum Ratings (Ta = 25°C) Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
