2SD1160 ,Transistor Silicon NPN Epitaxial Type (PCT process) Switching Applications Suitable for Motor Drive Applications
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2SD1164 ,Silicon transistorFEATURES
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R, = 10 k!) C'-
R2 = 500 kf2
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R1 R2 CD
QUALITY GRADE
Standard
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2SD1164-Z ,NPN SILICON EPITAXIAL TRANSISTOR MP-3applications.
ABSOLUTE MAXIMUM RATINGS (Ta: 25 °C)
Collector to Base Voltage Vcao ' 150 V
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2SD1160
Transistor Silicon NPN Epitaxial Type (PCT process) Switching Applications Suitable for Motor Drive Applications
2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SD1160 Switching Applications
Suitable for Motor Drive Applications High DC current gain Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) Built-in free wheel diode
Maximum Ratings (Ta = 25°C)
Equivalent Circuit Unit: mm
Weight: 0.36 g (typ.)
BASE
EMITTER
