2SD1012 ,NPN Epitaxial Planar Silicon Transistors Low-Voltage Large-Current Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1020 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation. (0.165 MAX.) (0.086 MAX.)
PT = 350 mW
. High hFE and l ..
2SD1022 , isc Silicon NPN Darlington Power Transistor
2SD103 , isc Silicon NPN Power Transistors
2SD1030 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1033 ,NPN SILICON EPITAXIAL TRANSISTOR MP-3TYPICAL CHARACTERISTICS (Ta = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Pr — ..
302R29N101JV4E , HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC
30405 , Flexible ferrite absorber platte
30410 , Flexible ferrite absorber platte
30485 ,FCI by Honeywell - Fire Fighter Phone Accessories
30546 , TRANSFORMER
30546 , TRANSFORMER
2SD1012
