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2SC5551SANYON/a415avaiNPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications


2SC5551 ,NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5552 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SC5552 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5555ZD-TR-E , Silicon NPN Epitaxial VHF / UHF wide band amplifier
2SC5564 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5564 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsFeatures [2SA2011/2SC5564]4.5 · Adoption of MBIT processes.1.51.6 · Large current capacitance. · Lo ..
2SK882 ,Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier ApplicationsApplications Unit: mm  Low reverse transfer capacitance: C = 0.025 pF (typ.) rss Low noise fi ..
2SK890 ,2SK890
2SK890 ,2SK890
2SK899 ,N-CHANNEL SILICON POWER MOS-FETFeatures IHigh speed switching . Low on-resistance "lo secondary breakdown OLow driving p ..
2SK901 ,N-CHANNEL SILICON POWER MOSFETFeatures 0High speed switching . Low on-resistance 0N0 secondary breakdown OLow driving p ..
2SK901 ,N-CHANNEL SILICON POWER MOSFET__2_SK901 IMax. Ratings and Characteristics ©Absolute Maximum Ratings(Tc=25°C) A2-19 FUJI ..


2SC5551

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