2SC5508 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTORFOR LOW NOISE ..
2SC5508 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES• Ideal for low-noise, high-gain amplification
2SC5508T2 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTORFOR LOW NOISE ..
2SC5508-T2 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTORFOR LOW NOISE ..
2SC5508-T2B , NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5515 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SK802 ,Fast switching N-channel silicon MOS field effect power transistor.F--=zabG--
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2SK808 ,Silicon N Channel Power FMOS FETFeaturesI Package Dimensions. Low ON resistance Ros (on) , Rus (on)=4.7n (typ.) Unit: mm0 High swit ..
2SK810 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FETN E C ELECTRONICS INC
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2SK813 ,Fast switching N-channel silicon MOS field effect power transistor.6427525 N E C ELECTRONICS INC 980 18974 D 73/374!
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2SK817 ,MOS FIELD EFFECT TRANSISTORFeatures
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