2SC5505 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.8±0.1 0.55±0.15Parameter Symbol Rating UnitCollector-base volt ..
2SC5505 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC5507 ,NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5507NPN SILICON RF TRANSISTOR FOR LOW CUR ..
2SC5507-T2 ,NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5507NPN SILICON RF TRANSISTOR FOR LOW CUR ..
2SC5508 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTORFOR LOW NOISE ..
2SC5508 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES• Ideal for low-noise, high-gain amplification
2SK798 ,N CHANNEL MOS FIELD POWER TRANSISTORFEATURES 0 4 V Gate Drive - Logic level -
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O No Secondary Breakdown
ABSOLUTE MA ..
2SK802 ,Fast switching N-channel silicon MOS field effect power transistor.F--=zabG--
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2SK808 ,Silicon N Channel Power FMOS FETFeaturesI Package Dimensions. Low ON resistance Ros (on) , Rus (on)=4.7n (typ.) Unit: mm0 High swit ..
2SK810 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FETN E C ELECTRONICS INC
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2SK811 ,MOS FIELD EFFECT TRANSISTORN E C ELECTRONICS INC ‘15 DEIEH27525 UDLEFIEE Cl Mr
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2SK813 ,Fast switching N-channel silicon MOS field effect power transistor.6427525 N E C ELECTRONICS INC 980 18974 D 73/374!
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