2SC5501 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5502 ,NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5503 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5504 ,NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier ApplicationsFeatures Package Dimensions · Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21 ..
2SC5505 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.8±0.1 0.55±0.15Parameter Symbol Rating UnitCollector-base volt ..
2SC5505 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SK794 ,2SK794
2SK794 ,2SK794
2SK796 ,Silicon N-channel Power F-MOS FET
2SK798 ,N CHANNEL MOS FIELD POWER TRANSISTORFEATURES 0 4 V Gate Drive - Logic level -
. Low RDS(on)
O No Secondary Breakdown
ABSOLUTE MA ..
2SK802 ,Fast switching N-channel silicon MOS field effect power transistor.F--=zabG--
"37 3
6427525 N E C ELECTRONICS INC 930 18958 D Fr
N E c ELECTRONICS INC =13 DEIg ..
2SK808 ,Silicon N Channel Power FMOS FETFeaturesI Package Dimensions. Low ON resistance Ros (on) , Rus (on)=4.7n (typ.) Unit: mm0 High swit ..
2SC5501
