2SC5437 ,NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5437-T1 ,Reduced noise high frequency amplification transistorT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5440 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SC5440 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5440 ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SC5445 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SK727 ,N-Channel Silicon Power MOS-FETFeatures IOutIine Drawings
q High speed switching
, ON?"v 4.5*oe
0 Low on-resistance 15.5..“ / ..
2SK727. ,N-Channel Silicon Power MOS-FETApplications 2.2 159mg
. Switching regulators 'ii2'l,
. U PS 1.5
5.45
o DC-DC converters
OGene ..
2SK727-01 ,N-Channel Silicon Power MOS-FET2SK727-01 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
F-I SERIES
M
2SK735 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FET8427525 N E C ELECTRONICS INC 980 18905 D TC. 3&413
TI DE 5927525 [1l31dlt'irHii ie1lr"
EClFiCATI ..
2SK736 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta " 25 °C)
SYMBOL
980 18908
I=1 DE'EH27525EIDLEEIUEJ ll
CH ..
2SK737 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta " 25 °C)
SYMBOL CHARACTERISTIC . . . TEST CONDITIONS
Drain to ..
2SC5437
