2SC5408 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5408-T1 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5409 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT97PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5409NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION O ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SK699 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORFEATURES . 4 V Gate Drive - Logic level - " MAX. 2 8 M
q Low R Sl ) A t0.334 MAX.) (0110 Ith )
D ..
2SK700 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty
SYMBOL
Maximum Temperatures
Storage Temperature . . ..
2SK701 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITION ..
2SK703 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 EC)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
..
2SK705 ,N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty
SYMBOL CHARACTERISTIC
Drain to Source On-State
TE ..
2SK711 ,Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier ApplicationsApplications High |Y |: |Y | = 25 mS (typ.) fs fs Low C : C = 7.5 pF (typ.) iss iss Maximum ..
2SC5408-2SC5408-T1
