2SC5392 ,For high breakdown voltage high-speed switchingElectrical Characteristics (T =25˚C)n CParameter Symbol Conditions min typ max UnitCollector cutof ..
2SC5404 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5406 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SC5408 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5408-T1 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5409 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT97PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5409NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SK681 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING====r:
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MOS FIELD E ..
2SK684 , SILICON N-CHANNEL MOS FET
2SK690 ,Gallium Arsenide DevicesElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit1, 2*Drain curren ..
2SK699 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORFEATURES . 4 V Gate Drive - Logic level - " MAX. 2 8 M
q Low R Sl ) A t0.334 MAX.) (0110 Ith )
D ..
2SK700 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty
SYMBOL
Maximum Temperatures
Storage Temperature . . ..
2SK701 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITION ..
2SC5392
