2SC5369 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATIONFEATURES PACKAGE DIMENSION (in mm)• High fT2.1±0.114 GHz TYP.1.25±0.1• High gain2| S21e | = 14 dB ..
2SC5369-T1 ,Microwave noise reduced amplifier/high gain amplifierFEATURES PACKAGE DIMENSION (in mm)• High fT2.1±0.114 GHz TYP.1.25±0.1• High gain2| S21e | = 14 dB ..
2SC5370 , Silicon NPN Epitaxial Planar Transistor(Emergency Lighting Inverter and General Purpose)
2SC5374 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifiers ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5383 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
2SC5386 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SK620 ,Silicon N-Channel MOS FETAbsolute Maximum Ratings (Ta = 25°C)Parameter Symbol Ratings Unit0.1 to 0.3Drain to Source breakdow ..
2SK65 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SK655 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK656 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SK656 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK659 ,N CHANNEL MOS FIELD EFECT POWER TRANSISTORFEATURES 0 4 V Gate Drive - Logic level -
. Low RDshan)
o No Secondary Breakdown
ABSOLUTE MA ..
2SC5369
