2SC5359 ,Silicon NPN Power Transistors TO-3PL packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5360 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. COLOR TV CHROMA OUTPUT APPLICATIONS.ELECTRICAL CHARACTERISTICS (Tc=25°C) Weight 1 1.7g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITc ..
2SC5368 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS.APPLICATIONSHigh Speed: tr=0.5,us (Max.), tf=0.3,us (Max.)IT~_(\OA\f-1,-tt-y:--ijrlhr--t JHigh Coll ..
2SC5368 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS.APPLICATIONS Unit in mmHIGH VOLTAGE SWlTCHING
2SC5369 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATIONFEATURES PACKAGE DIMENSION (in mm)• High fT2.1±0.114 GHz TYP.1.25±0.1• High gain2| S21e | = 14 dB ..
2SC5369-T1 ,Microwave noise reduced amplifier/high gain amplifierFEATURES PACKAGE DIMENSION (in mm)• High fT2.1±0.114 GHz TYP.1.25±0.1• High gain2| S21e | = 14 dB ..
2SK612-Z , MOS Field Effect Power Transistors
2SK614 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK615 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK619 , SILICON N-CHANNEL MOS FET
2SK620 ,Silicon N-Channel MOS FETAbsolute Maximum Ratings (Ta = 25°C)Parameter Symbol Ratings Unit0.1 to 0.3Drain to Source breakdow ..
2SK65 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SC5359
Silicon NPN Power Transistors TO-3PL package
TOSHIBA 2SC5359
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC5359
POWER AMPLIFIER APPLICATIONS Unit in mm
20.5MAX.
0 High Collector Voltage : VCE0=230V(Min.)
26.0i0.5
0 Complementary to 2SA1987
0 Recommend for 100W High Fidelity Audio Frequency Amplifier
Output Stage.
20.01’ 0.6
MAXIMUM RATINGS (Tc = 25°C) 1n-th25
5.45.t0.15 5.45:0.15
CHARACTERISTIC SYMBOL RATING UNIT 28 §
Collector-Base Voltage VCBO 230 V 3: 2 E
Collector-Emi) Voltage VCEO 230 V (352E:-
Emitter-Base Voltage VEBO 5 V 1 2 3
Collector Current 1C 15 A l. BASE
. . . 3. EMITTER
Collector Power Dissipation P 180 W
(Tc=25°C) C JEDEC -
J unction Temperature Tj 150 °C JEITA -
Storage Temperature Range Tstg -55--150 "C TOSHIB A 2-21F1A
Weight : 9.75g (Typ.)
ELECTRICAL CHARACTERISTICS (TC=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 230V, IE = 0 - - 5.0 pdk
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 5.0 PA
Collector-Emi;
Breakdown Voltage V (BR) CEO IC - 50mA, IB - 0 230 - - V
hFE (1)
V =5V, I = 1A 55 - 160
DC Current Gain (Note) CE C -
hFE (2) VCE = 5V, IC = 7A 35 87 -
Collector-Emitter
Saturation Voltage VCE (sat) IC - 8A, IB - 0.8A - 0.4 3.0 V
Base-Emitter Voltage VBE VCE = 5V, IC = 7A - 1.0 1.5 V
Transition Frequency fT VCE = 5V, IC = IA - 30 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = lMHz - 200 - pF
(Note) hFE (1) Classification R : 55--110, 0 .. 80--160
1 2001-11-05
TOSHIBA
10 (A)
COLLECTOR CURRENT
VCE (sat) (V)
COLLECTOEEMITTER SATURATION
VOLTAGE
10 (A)
COLLECTOR CURRENT
IC - VCE
MMON EMITTER
c = 25°C
0 2 4 6 8 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
Tc = 100°C
COMMON EMITTER
IC/IB=10
. 0.01 0.1 1 10 100
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
IC MAX. (PULSED) X
0 ImsW.
10 IC MAX.
(CONTINUOUS)
DC OPERATION
Tc = 25°C
.)..4 SINGLE
0.1 NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE
0.03 DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
3 10 30 100 300 1000 3000
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEO MAX.
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hm
2SC5359
IC - VBE
MMON EMITTER
CE =5V
Te-- 100°C
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
300 Te-- 100°C
100 25
3 COMMON EMITTER
VCE =5V
0.01 0.1 1 10 100
COLLECTOR CURRENT IC (A)
TOSHIBA 2SC5359
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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