2SC5356 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Switching Regulator Applications DC-DC Converter ApplicationsApplications Excellent switching times: t = 0.5 µs (max) (I = 1.2 A) f C High collectors bre ..
2SC5356 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage ..
2SC5358 ,Silicon NPN Power Transistors TO-3P(I) packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5358 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5359 ,Silicon NPN Power Transistors TO-3PL packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5360 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. COLOR TV CHROMA OUTPUT APPLICATIONS.ELECTRICAL CHARACTERISTICS (Tc=25°C) Weight 1 1.7g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITc ..
2SK612 ,MOS Field Effect Power Transistors
2SK612-Z , MOS Field Effect Power Transistors
2SK614 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK615 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK619 , SILICON N-CHANNEL MOS FET
2SK620 ,Silicon N-Channel MOS FETAbsolute Maximum Ratings (Ta = 25°C)Parameter Symbol Ratings Unit0.1 to 0.3Drain to Source breakdow ..
2SC5356
Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5356 High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A)
Maximum Ratings (Ta = 25°C) Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
