2SC5354 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5356 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Switching Regulator Applications DC-DC Converter ApplicationsApplications Excellent switching times: t = 0.5 µs (max) (I = 1.2 A) f C High collectors bre ..
2SC5356 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage ..
2SC5358 ,Silicon NPN Power Transistors TO-3P(I) packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5358 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5359 ,Silicon NPN Power Transistors TO-3PL packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SK611 ,MOS FIELD EFFECT POWER TRANSISTORPACKAGE DIMENSIONS (Unit: mm)
1. Gm
2. Drain
3. Source
a. Drain
MOS FIELD EFFECT POWER T ..
2SK612 ,MOS Field Effect Power Transistors
2SK612-Z , MOS Field Effect Power Transistors
2SK614 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK615 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK619 , SILICON N-CHANNEL MOS FET
2SC5354
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS
TOSHIBA 2SC5354
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC5354
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm
SWITCHING REGULATOR APPLICATIONS
HIGH SPEED DC-DC CONVERTER APPLICATIONS
15.9 MAX
0 Excellent Switching Times : tr=0.7ps (Max.)
tf= 0.5ps (Max.) (10 = 2A)
3.3MAX.
q High Collector Breakdown Voltage : VCEO=800V
1.0 - 0.25 .
5.45:0.2 5.45:0.2
MAXIMUM RATINGS (Tc=25°C) 'ii' 2:1?“ Q<1>é
a? d _tN <
CHARACTERISTIC SYMBOL RATING UNIT A_, -1----2----3-* tl?ss
Collector-Base Voltage VCBO 900 V 1 BASE
Collector-Emi; Voltage VCEO 800 V 2: COLLECTOR (HEAT SINK)
Emitter-Base Voltage VEBO 7 V 3. EMITTER
DC I 5
Collector Current C A JEDEC -
Pulse ICP 10
Base Current IB 2 A JEITA -
. . . TOSHIBA 2-16C1A
Collectoor Power Dissipation PC 100 W .
(Tc=25 C) Weight : 4.7g (Typ.)
Junction Temperature Tj 150 "C
Storage Temperature Range Tstg -55--150 "C
1 2001-11-05
TOSHIBA 2SC5354
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 800V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 7V, IC = 0 - - 1 mA
Collector-Base Breakdown
Voltage V (BR) CBO IC - lmA, IE - 0 900 - - V
Co11eetor-Emitter Breakdown
Voltage V (BR) CEO IC - 10mA, IB - 0 800 - - V
. hFE (1) VCE=5V, Ic=IOmA 10 - -
DC Current Gain hFE (2) VCE = 5V, IC =0.5A 15 - -
Collector-Emitter Saturation - -
Vol tage VCE (sat) IC - 2A, 1B - 0.4A - - 1.0 V
Base-Emitter Saturation
Vol tage VBE (sat) 1C - 2A, 1B - 0.4A - - 1.3 V
20 s u- C3
Rise Time tr b'd VCC . 400V g - - 0 7
it,ithing Storage Time tstg L UB2 0 ly OUT - - 4.0 gs
1B1 = 0.4A INPUT 7132 PUT
. IB2 = -0.8A - - 0.5
Fall Time tf DUTY CYCLE s 1%
2 2001 -1 1 -0 5
TOSHIBA 2SC5354
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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