2SC5352 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHIN REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.APPLICATIONSExcellent Switching Times: tr = 0.5 ps (Max.), tf = 0.3 ps (Max.) (10 = 4A)High Collect ..
2SC5353 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.2Excellent Switching Times: tr=0.7,us (Max.), tf=0.5,us (Max.)High ..
2SC5353 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS2SC53 53TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)SWITCHING REGULATOR AND HI ..
2SC5354 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5356 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Switching Regulator Applications DC-DC Converter ApplicationsApplications Excellent switching times: t = 0.5 µs (max) (I = 1.2 A) f C High collectors bre ..
2SC5356 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage ..
2SK611 ,MOS FIELD EFFECT POWER TRANSISTORPACKAGE DIMENSIONS (Unit: mm)
1. Gm
2. Drain
3. Source
a. Drain
MOS FIELD EFFECT POWER T ..
2SK612 ,MOS Field Effect Power Transistors
2SK612-Z , MOS Field Effect Power Transistors
2SK614 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK615 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK619 , SILICON N-CHANNEL MOS FET
2SC5352
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHIN REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
TOSHIBA 2SC5352
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC5352
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm
APPLICATIONS
HIGH SPEED DC-DC CONVERTER APPLICATIONS
20.0i0.3
0 Excellent Switching Times
: tr = 0.5 ps (Max.), tf = 0.3 ,us (Max.) (10 = 4A)
3.3MAX.
0 High Collectors Breakdown Voltage : VCEO = 400V
20.5 10.5
1.0-0'.25‘
5.45:0.2 5.45:0.2
MAXIMUM RATINGS (Tc = 25°C) g 'i'''''')'::'';,, :‘IX
a? o - <
CHARACTERISTIC SYMBOL RATING UNIT -L_- -j---l"--3-l f;
Collector-Base Voltage VCBO 600 V
. 1. BASE
fylrtotEmter,' Voltage VCEO 400 V 2. C OLLE CTOR (HEAT SINK)
Emitter-Base Voltage VEBO 7 V 3. EMITTER
Collector Current C C 0 A JEDEC -
Pulse ICP 15 JEITA
Base Current IB 5 A -
Collector Power Dissipation P 80 W TOSHIBA 2-16CIA
(Tc = 25°C) C Weight : 4.7 g (Typ.)
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -55--150 "C
1 2001-11-05
TOSHIBA 2SC5352
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 480V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 7V, 10 = 0 - - 1 mA
Collector-Base Breakdown
Voltage V(BR) CBO IC - 1 mA, IE - 0 600 - - V
Co11ector-Ernitter Breakdown
Voltage V (BR) CEO IC - 10 mA, IB - 0 400 - - V
DC Current Gain hFE VCE = 5V, IC = 1 A 20 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC - 4A, IB - 0.5 A - - 1.0 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 4A, IB - 0.5 A - - 1.3 V
20 s V = 200 V
Rise Time tr # CC - - 0.5
Switching .
Time Storage Time tstg - - 2.0 ,us
Fall Time tf IB1 = 0.5 A, IB2 = -1 A - - 0.3
DUTY CYCLE s 1%
TOSHIBA ZSC5352
IC - VCE IC - VBE
COMMON COMMON EMITTER
',i.i EMITTER Ci. VCE = 5 V
S? Tc = 25'C J.?
3 3 Tc = 100°C
0 2 4 6 8 10 o 0.5 1 1.5
c0LLECOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
o hFE - IC VCE (sat) - IC
COMMON EMITTER COMMON EMITTER
50 VCE=5V IC/IB=8
Tc = 100°C
DC CURRENT GAIN hFE
VOLTAGE vCEmt) (V)
COLLECTOREMIT’I‘ER SATURATION
0.3 0.5 1 3 5 10 30 Tc = 100°C
COLLECTOR CURRENT IC (A) 0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT 10 (A)
VBE(sat) - IC
COMMON EMITTER
IC/IB = 8
BASE-EMITTER SATURATION VOLTAGE
VBE(sat) (V)
0.1 0.3 0.5 l 3 5 10
COLLECTOR CURRENT 1C (A)
3 2001-11-05
TOSHIBA 2SC5352
SAFE OPERATING AREA
MAX. (PULSED) X
10 10,:st
IC MAX. .
(CONTINUOUS) 100 Ms .).K.
100 msX
DC OPERATION
0.3 Tc = 25''C
COLLECTOR CURRENT 10 (A)
lk. SINGLE
NONREPETITIVE
PULSE Tc = 25°C
0.03 CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE. VCEO MAX.
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
4 2001-11-05
TOSHIBA 2SC5352
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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