2SC5351 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY.APPLICATIONS FOR BATTERY CHARGER Unit in mmAND POWER SUPPLY80+02High Voltage :TTi oh RrwspdVCEO = 4 ..
2SC5351 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY.2SC5351HIGH SPEED SWITCHING
2SC5352 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHIN REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.APPLICATIONSExcellent Switching Times: tr = 0.5 ps (Max.), tf = 0.3 ps (Max.) (10 = 4A)High Collect ..
2SC5353 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.2Excellent Switching Times: tr=0.7,us (Max.), tf=0.5,us (Max.)High ..
2SC5353 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS2SC53 53TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)SWITCHING REGULATOR AND HI ..
2SC5354 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SK608 ,Silicon N Channel Junction TypeMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK611 ,MOS FIELD EFFECT POWER TRANSISTORPACKAGE DIMENSIONS (Unit: mm)
1. Gm
2. Drain
3. Source
a. Drain
MOS FIELD EFFECT POWER T ..
2SK612 ,MOS Field Effect Power Transistors
2SK612-Z , MOS Field Effect Power Transistors
2SK614 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK615 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SC5351
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY.
TOSHIBA 2SC5351
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC535M
HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER Unit in mm
AND POWER SUPPLY
0 High Voltage : VCEO=450V
0 High Speed : tr=0.5ps (Max.), tf=0.3,us (Max.) (10:0.8A)
13.5MIN. 7.030]
L + IF,
2.5 $0.5 U.25--225
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT It-! 2 3 - _
Collector-Base Voltage VCBO 650 V or.
Collector-Emi; Voltage VCEO 450 V o rm, 1. EMITTER
E itt B V 1t V 7 V 5 - 2. COLLECTOR
m1 er- ase o age EBO 3. BASE
Collector Current C C A JEDEC -
Pulse ICP 4 JEITA
Base Current IB 0.5 A -
Collector Power Dissipation PC 1.3 W TOSHIBA 2-8MIA
Junction Temperature Tj 150 "C Weight : 0.55g (Typ.)
Storage Temperature Range Tstg -55--150 ''C
1 2001-11-05
TOSHIBA 2SC5351
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 520V, IE = 0 - - 20 PA
Emitter Cut-off Current IEBO VEB = 7V, 1C = 0 - - 10 pA
Collector-Base Breakdown
Voltage V (BR) CBO IC - lmA, IE - 0 650 - - V
Collector-Emi; Breakdown
Voltage V (BR) CEO IE - 10mA, IC - 0 450 - - V
. hFE (1) VCE = 5V, IC = 1mA 13 - -
C Current Gain hFE (2) VCE = 5V, IC = 0.2A 20 - 65
Collector-Emitter Saturation
Voltage VCE (sat) 1C - 0.8A, IB - 0.1A - - 1.0 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 0.8A, IB - 0.1A - - 1.3 V
20 s V '=.200V C}
Rise Time tr II; CC 0 - - 0.5
S itchi IBl L,
W1 c mg .
Time Storage Time tstg - - 2.0 ps
Fall Time tf IBI = 0.IA, IB2 = -0.2A - - 0.3
DUTY CYCLES 1%
TOSHIBA
DC CURRENT GAIN hm COLLECTOR CURRENT 10 (A)
BASE-EMIT’I‘ER SATURATION VOLTAGE
VBE(sat) (V)
1C - VCE
COMMON
EMITTER
Ta = 25°C
0 2 4 6 8 IO
COLLECOR-EMITTER VOLTAGE VCE (V)
hFE - IC
Ta=100°C
COMMON i?,
EMITTER gi
VCE=5V ttt
0.01 0.03 0.05 0.1 0.3 0.5 1 3 g
COLLECTOR CURRENT IC (A) tit
VBE(sat) - IC g
COMMON
EMITTER
IC / IB = 8
Ta = 100''C
0.03 0.05 0.1 0.3 0.5 1 2
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT 10 (A)
VOLTAGE VCE (sat) (V)
2SC5351
IC - VBE
COMMON EMITTER
VCE=5V
//////
1 T =100°c
a I/nc-sts
o 0.5 1 1.5
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB=8
Ta = 100°C
0.03 0.1 0.3 1 2
COLLECTOR CURRENT IC (A)
TOSHIBA 2SC5351
SAFE OPERATING AREA
10 MAX. (PULSED) X
MAX. (CONTINUOU 10ms X
1 100ms8
100ps >:<
0.3 DC OPERATION
Ta = 25°C
X SINGLE
NONREPETITIVE
PULSE Ta=25°C
CURVES MUST BE
0.003 DERATED LINEARLY
WITH INCREASE IN
0 001 TEMPERATURE. VCEO MAX.
0.1 0.3 1 3 10 30 100 300 1000
COLLECTOR CURRENT 10 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
4 2001-11-05
TOSHIBA 2SC5351
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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