2SC5332 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _C)LOEi) Ln- TT- T wr 1. wr "r"Tf'tf't wr . A _.nlgn voltage : VCBO ..
2SC5336 ,NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIERPRELIMINARY DATA SHEETSilicon Transistor2SC5336NPN EPITAXIAL SILICON TRANSISTORHIGH FREQUENCY ..
2SC5336-T1 ,High-gain transistorPRELIMINARY DATA SHEETSilicon Transistor2SC5336NPN EPITAXIAL SILICON TRANSISTORHIGH FREQUENCY ..
2SC5337 ,NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIERDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SC5337NPN EPITAXIAL SILICON TRANSISTORHIGH ..
2SC5338 ,NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIERPRELIMINA DATA SHEET RY DATA SHEETSilicon Transistor2SC5338NPN EPITAXIAL SILICON TRANSISTORHI ..
2SC5338 ,NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIERPRELIMINA DATA SHEET RY DATA SHEETSilicon Transistor2SC5338NPN EPITAXIAL SILICON TRANSISTORHI ..
2SK513 , SILICON N-CHANNEL MOS FET
2SK525 ,SILICON P-CHANNEL MOS FET
2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SK530 , 2SK530
2SK532 , 2SK532
2SC5332
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS
TOSHIBA 2SC5332
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5332
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS 20.5MAX. 3310.2
q High Voltage : VCBO = 1700V
0 Low Saturation Voltage : VCE (sat) = 3 V (Max.) Fi',
0 High Speed : tf = 0.15 gs (Typ.) m if
iii :3 ru'
+0.3 a
MAXIMUM RATINGS (Ta = 25°C) 5.45S0.15 ""'"e
CHARACTERISTIC SYMBOL RATING UNIT 53'? '". w E
Collector-Base Voltage VCBO 1700 V ol Lu. WML)
Collector-Emi; Voltage VCEO 800 V 1 2 3 '
. l. BASE
Emitter-Base Voltage IVEBO /' V 2. COLLECTOR(HEAT SINK)
D . EMITTER
Collector Current C C A 3
Pulse ICP 28
JEDEC -
Base Current IB 7 A
Collector Power Dissipation P 200 W EIAJ -
(Tc = 25°C) C TOSHIBA 2-21F2A
Junction Temperature Tj 150 "C Weight : 9.75 g (Typ.)
Storage Temperature Range Tstg -55-150 T
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 100 pA
Collector-Emir Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 800 - - V
. hFE (1) VCE = 5V, 1C = IA 10 - 30
C Current Gain hFE (2) VCE = 5V, 1C = 8A 4 - 8.5
Collector-Emitter Saturation
Voltage VCE (sat) IC - 8A, IB - 2A - - 3 V
Base-Emitter Saturation - -
Voltage VBE (sat) IC - 8A, IB - 2A - 1.3 1.5 V
Transition Frequency fT VCE = 10V, IE = 0.1 A - 3 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 230 - pF
Switching Storage Time tstg ICP = 7 A, 1B1 (end) = 1.4 A - 2.0 3.5 s
Time Fall Time tf fH = 64 kHz - 0.15 0.3 /t
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
1999-09-02 1/3
TOSHIBA 2SC5332
IC - VCE VCE - IB
COMMON
EMITTER
Te = 25°C
COMMON
EMITTER
Tc = -25''C
7 Ic=8A
COLLECTOR CURRENT 10 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
IB = 0.1 A
0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 2.4
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE CURRENT IB (A)
hFE - IC VCE - IB
COMMON
EMITTER
Te = 25°C
COMMON EMITTER
VCE = 5 V
Te = 100°C
DC CURRENT hFE
COLLECTOR-EMITTER VOLTAGE VCE (V)
0.01 0.03 0.1 0.3 1 3 10 30 0 0.4 0.8 1.2 1.6 2 2.4
COLLECTOR CURRENT Ic (A) BASE CURRENT IB (A)
IC - VBE VCE - IB
COMMON
EMITTER
Te = 100°C
COMMON EMITTER
VCE = 5 V
Tc = 100°C 25 -25
COLLECTOR CURRENT 10 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.4 0.8 1.2 1.6 2 2.4
BASE-EMITTER VOLTAGE VBE (V) BASE CURRENT IB (A)
1999-09-02 2/3
TOSHIBA 2SC5332
rth(i-e) - tw 100 SAFE OPERATING AREA
IC MAx.(PULSED)M
10 MAX.
IO (CONTINUOUS)
Tc = 25°C (INFINITE HEAT SINK)
CURVE SHOULD BE APPLIED
IN THERMAL LIMITED AREA
(SINGLE NONREPETITIVE
TRANSIENT THERMAL IMPEDANCE
(JUNCTION- CASE) Fth (j-C) (°C / W)
COLLECTOR CURRENT 10 (A)
PULSE) DC OPERATION
.01 = o
0.001 0.01 0.1 1 10 100 1000 Tc 250
PULSE WIDTH tw (s)
PC - Te lk. SINGLE NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE DERATED CEO MAX.
LINEARLY WITH INCREASE IN
TEMPERATURE.
1 10 100 1000
INFINITE HEAT SINK
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSIPATION PC (W)
O 25 50 75 100 125 150
CASE TEMPERATURE Tc (°C)
1999-09-02 3/3
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