2SC5331 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _C)LOEi) Ln- TT- T wr 1. wr "eftf't wr . A _.nlgn voltage : VCBO = l ..
2SC5331 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS2SC5331HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5331 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _C)LOEi) Ln- TT- T wr 1. wr "eftf't wr . A _.nlgn voltage : VCBO = l ..
2SC5332 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _C)LOEi) Ln- TT- T wr 1. wr "r"Tf'tf't wr . A _.nlgn voltage : VCBO ..
2SC5336 ,NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIERPRELIMINARY DATA SHEETSilicon Transistor2SC5336NPN EPITAXIAL SILICON TRANSISTORHIGH FREQUENCY ..
2SC5336-T1 ,High-gain transistorPRELIMINARY DATA SHEETSilicon Transistor2SC5336NPN EPITAXIAL SILICON TRANSISTORHIGH FREQUENCY ..
2SK513 , SILICON N-CHANNEL MOS FET
2SK525 ,SILICON P-CHANNEL MOS FET
2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SK530 , 2SK530
2SK532 , 2SK532
2SC5331
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS
TOSHIBA 2SC5331
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
ZSCSBB’II
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS 20.5MAX. 3310.2
q High Voltage : VCBO = 1500V
0 Low Saturation Voltage : VCE (sat) = 3 V (Max.) Fi', . ui
o High Speed : tf = 0.12 gs (Typ.) N (il
2.5 g 2
+0.3 R'
MAXIMUM RATINGS (Ta = 25°C) 5.45S0.15 ""'"e
CHARACTERISTIC SYMBOL RATING UNIT $7? '". m rife.
Collector-Base Voltage VCBO 1500 V ol I u. En) la)
Collector-Emi; Voltage VCEO 600 V 1 2 3 '
Emitter-Base Voltage VEBO 5 V l. BASE
DC IC 15 2. COLLECTOR (HEAT SINK)
Collector Current A 3. EMITTER
Pulse ICP 30
JEDEC -
Base Current IB 7.5 A
Collector Power Dissipation P 180 W EIAJ -
(Tc = 25°C) C TOSHIBA 2-21F2A
Junction Temperature Tj 150 "C Weight : 9.75 g (Typ.)
Storage Temperature Range Tstg -55-150 T
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 10 pA
Collector-Emir Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 600 - - V
. hFE (1) VCE = 5V, 1C = IA 10 - 38
DC Current Gain hFE (2) VCE = 5V, IC = 9A 4.2 - 7.2 -
Collector-Emitter Saturation
Voltage VCE (sat) 1C - 9 A, 1B - 2.25A - - 3 V
Base-Emitter Saturation - -
Voltage VBE (sat) IC - 9A, IB - 2.25A - 1.0 1.4 V
Transition Frequency fT VCE = 10V, IE = 0.1 A - 1.7 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 160 - pF
Switching Storage Time tstg ICP = 8A, 1B1 (end) = 1.6A - 3.0 4.0 s
Time Fall Time tf fH = 64 kHz - 0.12 0.3 /t
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1999-09-02 1/3
TOSHIBA
2SC5331
COLLECTOR CURRENT 10 (A)
DC CURRENT GAIN hFE
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON
EMITTER
Tc = 25°C
0.8 1.0-1.2-1.4 1.6'1-813 = 3.0A
0 2 4 6 8 10
CoLLECToRaMITTER VOLTAGE VCE (V)
hFE - IC
COMMON
EMITTER
T =1 o
50 c 000 VCE =5V
0.05 0.1 0.3 0.5 0.1 3 5 10 30
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON
EMITTER
VCE=5V //
Tc = "C/ //
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMI’I‘TER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IB
COMMON
EMITTER
Tc = -25''C
91 112 3 14iC=15A
2 3 4 5 6 7 8
BASE CURRENT IB (A)
VCE - IB
COMMON
EMITTER
Te = 25°C
9 011121314
2 3 4 5 6 7 8
BASE CURRENT IB (A)
VCE - IB
COMMON
EMITTER
Te = 100°C
8 9 101112 13 14 lc=15A
2 3 4 5 6 7 8
BASE CURRENT IB (A)
1999-09-02 2/3
TOSHIBA
2SC5331
rth L - t
10 (i e) w
Te = 25°C (INFINITE HEAT SINK)
CURVE SHOULD BE APPLIED IN
THERMAL LIMITED AREA
(SINGLE NONREPETITIVE PULSE)
COLLECTOR CURRENT 10 (A)
TRANSIENT THERMAL IMPEDANCE
(JUNCTION-CASE) rthm) (°C/W)
0.1 m 1 m 10 m
PULSE WIDTH
SAFE OPERATING AREA
50 IC MAX.(PULSED))k.
10 MAX. 0 msg.
(CONTINUOUS)
3 100 msX
DC OPERATION
1 Tc = 25°C
IT. SINGLE NONREPETITIVE
50 m PULSE Te = 25°C
30m CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
1 3 10 30 100 300
1000 3000
tw (s)
COLLECTOR POWER DISSIPATION PC (W)
PC -Ta
INFINITE HEAT SINK
50 75 100 125 150
CASE TEMPERATURE Te (°C)
1999-09-02 3/3
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