2SC5317FT ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)APPLICATIONS Unit in mm(CHIP : fT = 16 GHz series):t1.2 i 0.05no . nn:Low Noise Figure : NF = 1.3 d ..
2SC5319 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = ..
2SC5321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applicationsapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC5322 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5331 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _C)LOEi) Ln- TT- T wr 1. wr "eftf't wr . A _.nlgn voltage : VCBO = l ..
2SK494 , Silicon N-Channel Junction FET
2SK513 , SILICON N-CHANNEL MOS FET
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2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SK530 , 2SK530
2SC5317FT
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)
TOSHIBA 2SC5317FT
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC5i7FT
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
(CHIP : fT = 16 GHz series)
1','c:',s. 1210.05
J, 01310.05
o Low Noise Figure : NF = 1.3 dB (f = 2 GHz) g 3
o High Gain : 8219]? = 9 dB (f = 2 GHz) :1; I tl
m - '4 1 g
Iii/y' - t 3
MAXIMUM RATINGS (Ta = 25°C) Ct 03 3
CHARACTERISTIC SYMBOL RATING UNIT 'a-
Collector-Base Voltage VCBO 8 V 3
Collector-Emi; Voltage VCEO 5 V “g? E
Emitter-Base Voltage VEBO 1.5 V tis,' l g
Collector Current IC 20 mA cr
Base Current IB 10 mA 1. BASE
Collector Power Dissipation PC 100 mW 2. EMITTER
. 3. COLLECTOR
Junction Temperature Tj 125 "C TESM
Storage Temperature Range Tstg -55--125 'C JEDEC -
EIAJ -
MARKING TOSHIBA 2-IBIA
3 Type Name Weight : 0.0022g
MICROWAVE CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Transition Frequency fT VCE = 3 V, IC = 15 mA 9 - - GHz
. . |821e|2(1) VCE = 3V, IC = 15 mA, f = 1 GHz 12 15 -
Insertion Gain IS21e|2 (2) VCE = 3 V, IC = 15 mA, f = 2 GHz 6 9 - dB
. . NF(1) VCE=3V,IC=5mA, f=1GHz - 0.9 1.8
Noise Figure NF (2) VCE = 3V, IC = 5 mA, f = 2 GHz - 1.3 2.2 dB
000707EAA2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizin TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your desi ns, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
o The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring1 equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment t at requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
0 The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
2000-09-11 1/2
TOSHIBA 2SC5317FT
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 8V, IE = 0 - - 1 PA
Emitter Cut-off Current IEBO VEB = 1 V, IC = O - - 1 PA
DC Current Gain hFE VCE = 3 V, IC = 15mA 50 - 250 V
Output Capacitance Cob VCB = 2.5V, IE = 0, - 0.6 - pF
Reverse Transfer Capacitance Cre f = 1 MHz (Note) - 0.4 0.85 pF
(Note) .' Cre is measured by 3 terminal method with Capacitance bridge.
CAUTION
This device electrostatic sensitivity. Please handle with caution.
2000-09-11 2/2
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