2SC5316 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16GHz Series)ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5317FT ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)APPLICATIONS Unit in mm(CHIP : fT = 16 GHz series):t1.2 i 0.05no . nn:Low Noise Figure : NF = 1.3 d ..
2SC5319 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = ..
2SC5321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applicationsapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC5322 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SK494 , Silicon N-Channel Junction FET
2SK513 , SILICON N-CHANNEL MOS FET
2SK525 ,SILICON P-CHANNEL MOS FET
2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SK530 , 2SK530
2SC5316
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16GHz Series)
TOSHIBA 2SC5316
TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
1/HF--UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
(CHIP : fr = 16 GHz series) 2.1101
1.25 $0.1
‘ ‘03—0
0 Low Noise Figure : NF = 1.3 dB (f = 2GHz)
2.0 30.2
0.65 0.65
0 High Gain : Ga = 9 dB (f = 2 GHz) 4
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT g i ‘1‘?
+l rs.--; ' 3.
Collector-Base Voltage VCBO 8 V 'li, C) CI ! ©
Collector-Emitter Voltage VCEO 5 V c- -
Emitter-Base Voltage VEBO 1.5 V el,
Collector Current IC 20 mA l. B ASE
Base Current IB 10 mA 2. EMITTER
Collector Power Dissipation PC 100 mW 3. COLLECTOR
J unction Temperature Tj 125 °C JEDEC -
Storage Temperature Range Tstg -55--125 "C EIAJ SC-70
TOSHIBA 2-2E1A
MARKING Weight : 0.006g
MICROWAVE CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Transition Frequency fT VCE = 3 V, IC = 15mA 9 - - GHz
. . lS21e|2 (1) VCE = 3V, IC = 15 mA, f= 1 GHz 12 15 -
Insertion Gain ls21el2 (2) VCE = 3 V, IC = 15 mA, f = 2 GHz 6 9 - dB
. . NF(1) VCE=3V, IC=5mA, f-- lGHz - 0.9 1.8
Noise Figure NF (2) VCE = 3 V, IC = 5mA, f = 2 GHz - 1.3 2.2 dB
1 2001-05-31
TOSHIBA 2SC5316
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 8V, IE = 0 - - 1 PA
Emitter Cut-off Current IEBO VEB = 1 V, 10 = 0 - - 1 PA
DC Current Gain hFE VCE = 3 V, IC = 15mA 50 - 250 V
Output Capacitance Cob VCB = 2.5V, IE = 0, - 0.6 - pF
Reverse Transfer Capacitance Cre f = 1 MHz (Note) - 0.4 0.85 pF
(Note) : Cre is measured by 3 terminal method with Capacitance bridge.
CAUTION
This device electrostatic sensitivity. Please handle with caution.
2001 -05-31
TOSHIBA 2SC5316
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-05-31
:
www.loq.com
.
