2SC5307 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS.ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5310 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsFeatures Package Dimensions · Adoption of FBET, MBIT processes.unit:mm · Large current capacitance. ..
2SC5310 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5316 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16GHz Series)ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5317FT ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)APPLICATIONS Unit in mm(CHIP : fT = 16 GHz series):t1.2 i 0.05no . nn:Low Noise Figure : NF = 1.3 d ..
2SC5319 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = ..
2SK447 , TECHNICAL DATA
2SK492 , FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
2SK494 , Silicon N-Channel Junction FET
2SK513 , SILICON N-CHANNEL MOS FET
2SK525 ,SILICON P-CHANNEL MOS FET
2SK526 , MOTOR AND SOLENOID DRIVE APPLICATIONS
2SC5307
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS.
TOSHIBA
2SC5307
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC5307
HIGH VOLTAGE SWITCHING APPLICATIONS
Unit in mm
4.6MAX. 1-6MN3-
0 High Voltage : VCE0=400V 1.7MAX. 0410.05 -
0 Low Saturation Voltage 'Ch" g . I
: VCE (sat)=0.4v (Typ.) (10 =20mA, IB =0.5mA) ',t,i, g
1 l, . *
MAXIMUM RATINGS (Ta = 25°C) mosh - E
0.45-0.05 g
CHARACTERISTIC SYMBOL RATING UNIT +0.08 ll +0.08
0y1-0.05 , 0.4-0.05
Collector-Base Voltage VCBO 400 V 1310.1 1510.1
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 7 V LLLL2
C 11 t C t DC IC 50 mA 1 2 3
o ee or urren Pulse ICP 100
Base Current IB 25 mA 1 B ASE
Collector Power Ta=25°C P 500 mW 2. COLLECTOR (FIN)
Dissipation Ta=25°C (Note) C 1000 3. EMITTER
Junction Temperature Tj 150 "C JEDEC -
Storage Temperature Range Tstg -55--150 T JEIT A SC-62
(Note) : Mounted on Ceramic Substrate (250mm2X0.8t) TOSHIBA 2-5KIA
Weight : 0.05g(Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=400V, IE=0 - - 1 PA
Emitter Cut-off Current IEBO VEB=7V, Ic=0 - - 1 PA
Collector-Emitter Breakdown
I = 1mA I = 4 - -
Voltage VCEO C ' B 0 00 V
. hFE (1) VCE = 5V, IC = 1mA 80 - -
DC Current Gain hFE (2) VCE =5V, IC =20mA 100 - 300
Collector-Emi; Saturation - -
Voltage VCE (sat) IC - 20mA, IB - 0.5mA - 0.4 1.0 V
Base-Emitter Voltage VBE VCE = 5V, 1C =20mA - 0.7 0.85 V
Collector Output Capacitance Cob VCB = 10V, IE =0, f = 1MHz - 4.0 - pF
TOSHIBA
10 (A)
COLLECTOR CURRENT
CO LLECTOR-EMITTER SATURATION
COLLECTOR POWER DISSIPATXON
PC (W)
VOLTAGE VCE (sat) (mV)
IC - VCE
lmA 900800700 600 500
COMMON
EMITTER
Ta = 25''C
2 4 6 8 10
C0LLEcT0R-EMITTER VOLTAGE VCE (V)
IB --50MA
VCE (sat) - IC
COMMON
EMITTER
IC/IB =5
Ta= 100°C
10 20 30 40 50
COLLECTOR CURRENT IC (mA)
40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
DC CURRENT GAIN hFE
COLLECTOR CURRENT 10 (mA)
10 (A)
COLLECTOR CURRENT
2SC5307
hFE - IC
30 Ta-- 100°C
COMMON
EMITTER
VCE = 10V
0.1 1 10 100
COLLECTOR CURRENT 10 (mA)
IC - VBE
COMMON
EMITTER
VCE = 10v
Ta =100°C 25
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
10 MAX.(PULSED) .)K. ImsW. .
100 l llllllll _ tIrs _ ‘100/‘5X3
IC MAX. (CONTINUOUS) \ _ \
50 l l 1 [llllN N
30 [llllllllN \
_DC OPERATION \ N N
Ta=25°C N 100rns).k
I I I k
10 10ms)k. N
3 )i(.SINGLE N
NONREPETITIVE N
PULSE Ta=25°C N
CURVES MUST BE N
1 DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE. XHEO Pf
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC5307
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
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