2SC5242 ,NPN Epitaxial Silicon TransistorELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 4.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SC5242OTU , NPN Epitaxial Silicon Transistor
2SC5243 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Power Transistors2SC5243Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: ..
2SC5244 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC1.0– 0.2Parameter Symbol Ratings Unit0.6– 0.2Collector to 2S ..
2SC5244 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Featuresnl High breakdown voltage, and high reliability through the use of aglass passivation layer ..
2SC5244A ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC1.0– 0.2Parameter Symbol Ratings Unit0.6– 0.2Collector to 2S ..
2SK4200LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4200LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4207 ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) ＋0.3 1.0 －0.25 Characteristics Symbol Rating Unit 5.45±0.2 5.4 ..
2SK433 , FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
2SK436 ,High-Frequency,Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta =25°C ' unitDrain-to-Source Voltage VDSS 15 VGate-to-Drain Voltage k ..
2SK439 , Silicon N-Channel MOS FET
2SC5242
NPN Epitaxial Silicon Transistor
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC5242
POWER AMPLIFIER APPLICATIONS
Output Stage.
MAXIMUM RATINGS (Tc = 25°C)
Complementary to 2SA1962
High Collector Breakdown Voltage : VCE0=230V (Min.)
Recommend for 80W High Fidelity Audio Frequency Amplifier
2SC5242
Unit in mm
3.3MAX.
20.5 $0.5
CHARACTERISTIC SYMBOL RATING UNIT 5.45 t o. 2 5.45: 0.2
Collector-Base Voltage VCBO 230 V t:' 'ic? co .
Collector-Emi; Voltage VCEO 230 V 3;: . .1. . _f "ii'
Emitter-Base Voltage VEBO 5 V - T _____2 / +2
Collector Current 10 15 A
Base Current IB 1.5 A 1. BASE
Collector Power Dissipation 2. COLLECTOR (HEAT SINK)
3. EMITTER
(Tc: 25°C) PC 130 W
J unction Temperature Tj 150 "C JEDEC -
Storage Temperature Tstg - 55 -- 150 "C JEITA -
TOSHIBA 2-16C1A
ELECTRICAL CHARACTERISTICS (Tc = 25°C) Weight 2 4.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 230V, IE = 0 - - 5.0 PA
Emitter Cut-off Current IEBO VEB = 5V, 1C = 0 - - 5.0 pA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC - 50mA, IB - 0 230 - - V
km (1)
= I = IA - 1
DC Current Gain (Note) VCE 5V, C 55 60
hFE (2) VCE = 5V, IC = 7A 35 60 -
Collector-Emitter Saturation
Voltage VCE (sat) IC - 8A, IB - 0.8A - 0.4 3.0 V
Base-Emitter Voltage VBE VCE = 5V, 10 = 7A - 1.0 1.5 V
Transition Frequency fT VCE = 5V, IC = IA - 30 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = lMHz - 200 - pF
(Note) : hFE (1) Classification
R : 55--110, O : 80-160
TOSHIBA
1C (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V) COLLECTOR CURRENT
10 (A)
COLLECTOR CURRENT
IC - VCE
MMON EMITTER
c = 25°C
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
Te-- 100'C
0.03 COMMON EMITTER
I /IB= 10
0.01 C
0.01 0.1 1 10 100
COLLECTOR CURRENT Ic (A)
SAFE OPERATING AREA
IC MAX. (PULSED) IT.
IC MAX.
(CONTINUOUS)
30 lmsX
DC OPERATION
Tc = 25°C
3 100msyf
X SINGLE
NONREPETITIVE
0.1 PULSE Tc=25°C
CURVES MUST BE
DERATED LINEARLY
0.05 WITH INCREASE IN
TEMPERATURE. MAX.
10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hFE
ZSC5242
IC - VBE
MMON EMITTER
Tc=100°C
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
300 Tc=100°C
100 25
3 COMMON EMITTER
VCE =5V
0.01 0.1 1 10 100
COLLECTOR CURRENT IC (A)
TOSHIBA 2SC5242
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
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