2SC5216 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5226 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5227 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5229 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsFeatures Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 · High gain : ‰ S21e‰ =10. ..
2SC5231 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsFeatures Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 · High gain : ‰ S21e‰ =12d ..
2SC5238 ,Ultrahigh-Definition Color Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta =25''C unitCollector-to-Baee Voltage VCBO . 1500 VCollector-to-Emitt ..
2SK4101FS , General-Purpose Switching Device Applications
2SK4101LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4107 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 0.833 ..
2SK4115 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristic Symbol Max UnitThermal resistance, channel to case R 0.833 ..
2SK4120LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4121LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SC5216
