2SC5201 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS.ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5209 , High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800.
2SC5209 , High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800.
2SC5210 , FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE
2SC5216 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5226 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK4085LS ,N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 500 VDS ..
2SK4086LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4087LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4088LS ,Power MOSFET 650V 11A 0.85 Ohm Nch Single TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain to Source Voltage V 650 VDS ..
2SK4092-A , SWITCHING N-CHANNEL POWER MOS FET
2SK4096LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SC5201
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS.
TOSHIBA 2SC5201
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5201
HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm
5.1 MAX.
0 High Voltage : VCEO = 600V g
0 Low Saturation Voltage g
: VCE (sat) = 1.0V (Max.) (10 = 20 mA, IB = 0.5 mA)
MAXIMUM RATINGS (Ta = 25°C) Q ig'
CHARACTERISTIC SYMBOL RATING UNIT 2 s;
Collector-Base Voltage VCBO 600 V
Collector-Emitter Voltage VCEO 600 V
Emitter-Base Voltage VEBO 7 V g
DC 10 50 E
Co ector Current Pulse ICP 100 mA *4”. c; ,
Base Current 1B 25 mA Ci
. . . 1. EMITTER
Collector Power Dissipation PC 900 mW 2. COLLECTOR
Junction Temperature Tj 150 °C 3. BASE
Storage Temperature Range Tstg -55--150 "C JEDEC T0-92MOD
JEITA -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 600 V, IE = 0 - - 1 PA
Emitter Cut-off Current IEBO VEB = 7 V, 10 = 0 - - 1 PA
Collector-Emitter Breakdown
Voltage VCEO IC - 1 mA, IB - 0 600 - - V
. hFE (1) VCE = 5V, IC = 1mA 80 - -
C Current Gain hFE (2) VCE = 5 V, IC = 20mA 100 - 300
Collector-Emi; Saturation
Vol tage VCE (sat) IC - 20 mA, 1B - 0.5 mA - - 1.0 V
Base-Emitter Voltage VBE VCE = 5 V, IC = 20mA - 0.66 0.85 V
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1 MHz - 6.5 - pF
1 2001-11-05
TOSHIBA 2SC5201
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
2 2001-11-05
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