2SC5200. ,NPN Epitaxial Silicon TransistorELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC5200OTU , NPN Epitaxial Silicon Transistor
2SC5200RTU , NPN Epitaxial Silicon Transistor
2SC5201 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS.ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5209 , High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800.
2SC5209 , High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800.
2SK4078-ZK-E1-AY , SWITCHING N-CHANNEL POWER MOS FET
2SK408 , SILICON N CHANNEL MOS FET
2SK408 , SILICON N CHANNEL MOS FET
2SK4085LS ,N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 500 VDS ..
2SK4086LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4087LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SC5200
NPN Epitaxial Silicon Transistor
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: I = 17A. C TO-264 1 • High Power Dissipation : 150watts. • High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter • High Voltage : V =250V CEO • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are available. • Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* T = 25°C unless otherwise noted a Symbol Parameter Ratings Units BV Collector-Base Voltage 250 V CBO BV Collector-Emitter Voltage 250 V CEO BV Emitter-Base Voltage 5 V EBO I Collector Current(DC) 17 A C I Base Current 1.5 A B P Total Device Dissipation(T =25°C) 150 W D C Derate above 25°C 1.04 W/°C T , T Junction and Storage Temperature - 50 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Max. Units R Thermal Resistance, Junction to Case 0.83 °C/W θJC * Device mounted on minimum pad size h Classification FE Classification R O h 55 ~ 110 80 ~ 160 FE1 © 2009 2SC5200/FJL4315 Rev. C 1
