2SC5200. ,NPN Epitaxial Silicon TransistorELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC5200OTU , NPN Epitaxial Silicon Transistor
2SC5200RTU , NPN Epitaxial Silicon Transistor
2SC5201 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS.ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5209 , High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800.
2SC5209 , High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800.
2SK408 , SILICON N CHANNEL MOS FET
2SK408 , SILICON N CHANNEL MOS FET
2SK4085LS ,N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 500 VDS ..
2SK4086LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4087LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4088LS ,Power MOSFET 650V 11A 0.85 Ohm Nch Single TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain to Source Voltage V 650 VDS ..
2SC5200.
NPN Epitaxial Silicon Transistor
TOSHIBA 2SC5200
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC5200
POWER AMPLIFIER APPLICATIONS Unit in mm
0 Complementary to 2SA1943
0 Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage. 'it,
MAXIMUM RATINGS (Tc = 25°C) 2.5
CHARACTERISTIC SYMBOL RATING UNIT +03
Collector-Base Voltage VCB0 230 V 5.45:0.15 5.45:0.15
Collector-Emi; Voltage VCEO 230 V we T'
Emitter-Base Voltage VEBO 5 V 'te'' tr? E
Collector Current 1C 15 A 'c'utzzrzE1 m
Base Current IB 1.5 A 1 2 3 -
Coll_ecto°r Power Dissipation PC 150 W l. 'BASE
(Te=25 C) 2. COLLECTOR (HEAT SINK)
Junction Temperature Tj 150 "C 3. EMITTER
Storage Temperature Range Tstg -55--150 "C JEDEC -
JEITA -
TOSHIBA 2-21F1A
Weight : 9.75g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 230V, IE = 0 - - 5.0 PA
Emitter Cut-off Current IEBO VEB = 5V, 10 = 0 - - 5.0 PA
Collector-Emi; Breakdown
Voltage V (BR) CEO IC - 50mA, IB - 0 230 - - V
hFE (1)
V = V, I = 1A - 160
DC Current Gain (Note) CE 5 C 55
hFE (2) VCE = 5V, IC = 7A 35 60 -
Collector-Emitter Saturation
Vol tage VCE (sat) IC - 8A, IB - 0.8A - 0.40 3.0 V
Base-Emitter Voltage VBE VCE = 5V, 10 = 7A - 1.0 1.5 V
Transition Frequency fT VCE = 5V, IC = IA - 30 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = lMHz - 200 - pF
(Note) : hFE(1) Classification R : 55--110, 0 : 80--160
1 2001-11-05
TOSHIBA
1C (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(Sdt) (V)
10 (A)
COLLECTOR CURRENT
IC - VCE
MMON EMITTER
c = 25°C
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
Tc= 100''C
0.03 COMMON EMITTER
IC/IB= 10
0.01 0.1 1 10 100
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
IC MAX. (PULSED) IT.
IC MAX.
(CONTINUOUS)
3O lmsX
DC OPERATION
5 Tc = 25°C
3 100ms).k.
X SINGLE
NONREPETITIVE
0.1 PULSE Te=25''C
CURVES MUST BE
DERATED LINEARLY VCEO
0.05 WITH INCREASE IN MAX.
TEMPERATURE.
3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hpE
ZSC5200
IC - VBE
MMON EMITTER
Te-- 100°C
O 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
3 COMMON EMITTER
VCE = 5V
0.01 0.1 1 10 100
COLLECTOR CURRENT 10 (A)
TOSHIBA 2SC5200
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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