2SC5196 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 4.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SC5197 ,Silicon NPN Power Transistors TO-3P(I) packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5197 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 4.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SC5198 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 4.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SC5199 ,Silicon NPN Power Transistors TO-3PL packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC5200 ,NPN Epitaxial Silicon TransistorFeatures• High Current Capability: I = 17A.CTO-2641• High Power Dissipation : 150watts.• High Frequ ..
2SK4065 ,N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 75 VDSS ..
2SK4066 ,N-Channel Power MOSFET, 60V, 100A, 4.7mOhm, TO-262-3L/TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 60 VDSS ..
2SK4070 , MOS FIELD EFFECT TRANSISTOR
2SK4070-S15-AY , MOS FIELD EFFECT TRANSISTOR
2SK4078-ZK-E1-AY , SWITCHING N-CHANNEL POWER MOS FET
2SK408 , SILICON N CHANNEL MOS FET
2SC5196
Silicon NPN Power Transistors TO-3P(I) package
TOSHIBA 2SC5196
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC51196
POWER AMPLIFIER APPLICATIONS Unit in mm
1 5.9 MAX
0 Complementary to 2SA1939 'e
0 Recommend for 40W High Fidelity Audio Frequency Amplifier x. ' Q ii';
Output Stage. 3 E
MAXIMUM RATINGS (Tc = 25°C) ut
CHARACTERISTIC SYMBOL RATING UNIT +0.3 g
1.0-0.25 'N
Collector-Base Voltage VCBO 80 V 5.45: 0.2 5.45t 0.2
Collector-Emitter Voltage VCEO 80 V A g;
Emitter-Base Voltage VEBO 5 V if, +£11.21 *2 i
Collector Current IC 6 A 'cL, 'ie-i-y ‘13
Base Current IB 0.6 A
Collector Power Dissipation l. B ASE
(Tc=25°C) PC 60 W 2. COLLECTOR (HEAT SINK)
Junction Temperature Tj 150 "C 3. EMITTER
Storage Temperature Range Tstg -55-150 "C JEDEC -
JEITA -
TOSHIBA 2-16C1A
ELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 4.7g(Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 5.0 PA
Emitter Cut-off Current IEBO VEB=5V, 10:0 - - 5.0 pA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC =50mA, IB =0 80 - - V
km (1)
= I =1A - 1
DC Current Gain (Note) VCE 5V, C 55 60
hFE (2) VCE = 5V, IC = 3A 35 75 -
Collector-Emitter Saturation
Voltage VCE (sat) IC - 5A, 1B - 0.5A - 0.45 2.0 V
Base-Emitter Voltage VBE VCE = 5V, 10 = 3A - 0.92 1.5 V
Transition Frequency fT VCE = 5V, IC = IA - 30 - MHz
Collector Output Capacitance Cob VCB = 10V, IE =0, f = lMHz - 75 - pF
(Note) : hFE (1) Classification
R : 55--110, O : 80-160
TOSHIBA
10 (A)
COLLECTOR CURRENT
COLLECTOR—EMITTER SATURATION
VOLTAGE VCEMU (V)
10 (A)
COLLECTOR CURRENT
IC - VCE
COMMON EMITTER
Tc = 25''C
300 ore 250
IB = 10mA
2 4 6 8
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
Te-- 100°C
Tc=25°C COMMON EMITTER
IC/IB=10
. 0.01 0.1 1
COLLECTOR CURRENT Ic (A)
SAFE OPERATING AREA
Irflrffr
10 MAX. (PULSED) IK.
I llllllll _
h 1ms.2f
310 MAX. (CONTINUOUS)
'sc N k l ...-1 Omr)k.
100msyd. ir
lllll l
DCOPERATION \
Te = 25°C
ik. SINGLE
NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE
DERATED LINEARLY v
WITH INCREASE IN CEO
TEMPERATURE. IIVIAX.
1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hFE
2SC5196
IC - VBE
c=100°C
-25''C
COMMON EMITTER
VCE=5V
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
Tc=100°C
100 Te=25''C
Te-- -25''C
COMMON EMITTER
VCE = 5V
0.01 0.1 1 10
COLLECTOR CURRENT IC (A)
TOSHIBA 2SC5196
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
