2SC5192 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDT88DATA SHEETSILICON TRANSISTOR2SC5192MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTO ..
2SC5192-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDT88DATA SHEETSILICON TRANSISTOR2SC5192MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTO ..
2SC5193 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLDT88DATA SHEETDATA SHEETSILICON TRANSISTOR2SC5193MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EP ..
2SC5193-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLDT88DATA SHEETDATA SHEETSILICON TRANSISTOR2SC5193MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EP ..
2SC5194 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORT88DATA SHEETSILICON TRANSISTOR2SC5194MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR
2SC5195 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR88DATA SHEETSILICON TRANSISTOR2SC5195MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR
2SK4033 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 6.25 ° ..
2SK4042 , Switching Regulator Applications
2SK405 ,Silicon N Channel MOS typeFEATURES:High Breakdown Voltage 2 VDSS=160V. High Forward Transfoer Admittance : |Yf51=2.OS (Typ.). ..
2SK405. ,Silicon N Channel MOS typeTOSHIBA FIELD EFFECT TRANSISTORSILICON N CHANNEL MOS TYPETOSHIBA (DISCRETE/OPTO)28005P l CA-CS,AUDI ..
2SK4065 ,N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 75 VDSS ..
2SK4066 ,N-Channel Power MOSFET, 60V, 100A, 4.7mOhm, TO-262-3L/TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 60 VDSS ..
2SC5192-2SC5192-T1
