2SC5180-T1 ,High fT, high gain transistorFEATURESPACKAGE DIMENSIONS• Low current consumption and high gain(Units : mm) 2⎜S21e⎥ = 12 dB TYP. ..
2SC5181 ,NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION84DATA SHEETSILICON TRANSISTOR2SC5181NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MO ..
2SC5182 ,NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT86DATA SHEETSILICON TRANSISTOR2SC5182NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE ..
2SC5183 ,NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT86DATA SHEETSILICON TRANSISTOR2SC5183NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLDPAC ..
2SC5184-T2 ,NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT86DATA SHEETSILICON TRANSISTOR2SC5184NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLDPA ..
2SC5185 ,NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT86DATA SHEETSILICON TRANSISTOR2SC5185NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD ..
2SK3994 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 250 ..
2SK4012 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristic Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK4012 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage V 500 V ..
2SK4013 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 2.78 ..
2SK4016 , Silicon N-Channel MOS Type Switching Regulator Applications
2SK4017 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Symbol Rating Unit 1 2 3 Drain−sour ..
2SC5180-T1
