2SC5177 ,NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT84DATA SHEETSILICON TRANSISTOR2SC5177NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE ..
2SC5178 ,NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT84DATA SHEETSILICON TRANSISTOR2SC5178NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD ..
2SC5179 ,NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT84DATA SHEETSILICON TRANSISTOR2SC5179NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD ..
2SC5180 ,NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS• Low current consumption and high gain(Units : mm) 2⎜S21e⎥ = 12 dB TYP. ..
2SC5180-T1 ,High fT, high gain transistorFEATURESPACKAGE DIMENSIONS• Low current consumption and high gain(Units : mm) 2⎜S21e⎥ = 12 dB TYP. ..
2SC5181 ,NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION84DATA SHEETSILICON TRANSISTOR2SC5181NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MO ..
2SK3991 ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching TO-251 (MP-3) 2SK3991 characteristics, a ..
2SK3991-ZK ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3991SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3993 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3993SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3994 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 250 ..
2SK4012 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristic Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK4012 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage V 500 V ..
2SC5177
